4″ 6″ 8″ Ihe na-arụ ọrụ & ihe mgbochi ọkara

Nkọwa dị mkpirikpi:

Semicera na-agba mbọ ịnye substrates semiconductor dị elu, nke bụ isi ihe maka imepụta ngwaọrụ semiconductor. A na-ekewa substrates anyị n'ime ihe ndị na-eduzi na nke ọkara mkpuchi iji gboo mkpa nke ngwa dị iche iche. Site n'ịghọta nke ọma akụrụngwa eletriki nke mkpụrụ, Semicera na-enyere gị aka ịhọrọ ihe kachasị mma iji hụ na arụmọrụ dị mma na nrụpụta ngwaọrụ. Họrọ Semicera, họrọ ezigbo mma nke na-emesi ntụkwasị obi ike na ihe ọhụrụ.


Nkọwa ngwaahịa

Mkpado ngwaahịa

Silicon carbide (SiC) otu ihe kristal nwere nnukwu oghere obosara (~ Si 3 ugboro), ịdị elu nke thermal conductivity (~ Si 3.3 ugboro ma ọ bụ GaAs ugboro 10), ọnụego mgbanwe saturation elektrọn dị elu (~ Si 2.5 ugboro), ọkụ eletrik dị elu. ubi (~ Si ugboro 10 ma ọ bụ GaAs 5 ugboro) na njirimara ndị ọzọ pụtara ìhè.

Ọgbọ nke atọ semiconductor ihe tumadi gụnyere SiC, GaN, diamond, wdg, n'ihi na ya band ọdịiche obosara (Eg) karịrị ma ọ bụ hà 2.3 electron volts (eV), makwaara dị ka wide band gap semiconductor ihe. E jiri ya tụnyere nke mbụ na nke abụọ ọgbọ semiconductor ihe, ọgbọ nke atọ semiconductor ihe nwere uru nke elu thermal conductivity, elu mmebi eletriki, elu juputara eletrọn Mbugharị ọnụego na elu bonding ike, nke nwere ike izute ọhụrụ chọrọ nke ọgbara ọhụrụ technology electronic maka elu. okpomọkụ, ike dị elu, nrụgide dị elu, ugboro ugboro na nguzogide radieshon na ọnọdụ ndị ọzọ siri ike. Ọ nwere atụmanya ngwa dị mkpa na mpaghara nchekwa mba, ụgbọ elu, ikuku ikuku, nyocha mmanụ, nchekwa anya, wdg, ma nwee ike belata ọnwụ ike karịa 50% n'ọtụtụ ụlọ ọrụ dị mkpa dị ka nkwukọrịta brọdband, ike anyanwụ, nrụpụta ụgbọ ala, semiconductor ọkụ, na smart grid, ma nwee ike ibelata olu akụrụngwa karịa 75%, nke bụ ihe dị mkpa maka mmepe sayensị na teknụzụ mmadụ.

Ike Semicera nwere ike inye ndị ahịa ihe nrụpụta dị elu (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity Semi-insulating) silicon carbide substrate; Na mgbakwunye, anyị nwere ike inye ndị ahịa akwụkwọ mpempe akwụkwọ nke silicon carbide dị iche iche na nke dị iche iche; Anyị nwekwara ike hazie mpempe akwụkwọ epitaxial dị ka mkpa ndị ahịa si dị, ọ nweghịkwa ọnụọgụ kacha nta.

Nkọwapụta WAFERING

*n-Pm=n-ụdị Pm-Grade,n-Ps=n-ụdị Ps-Grade,Sl=Ọkara ala.

Ihe

8-anụ ọhịa

6-anụ ọhịa

4-anụ ọhịa
nP n-Pm n-Ps SI SI
TTV(GBIR) ≤6um ≤6um
Ụta(GF3YFCD)-Uru zuru oke ≤15μm ≤15μm ≤25μm ≤15μm
Warp(GF3YFER) ≤25μm ≤25μm ≤40μm ≤25μm
LTV(SBIR) -10mmx10mm <2μm
Wafer Edge Beveling

IMEcha elu elu

*n-Pm=n-ụdị Pm-Grade,n-Ps=n-ụdị Ps-Grade,Sl=Ọkara mkpuchi

Ihe

8-anụ ọhịa

6-anụ ọhịa

4-anụ ọhịa

nP n-Pm n-Ps SI SI
Emecha elu elu Akụkụ abụọ Optical Polish, Si- Face CMP
Ọdịdị elu (10um x 10um) Si-FaceRa≤0.2nm
C-Ihu Ra≤ 0.5nm
(5umx5um) Si-Face Ra≤0.2nm
C-Ihu Ra≤0.5nm
ibe ibe Ọnweghị nke ekwenyere (ogologo na obosara≥0.5mm)
Indents Ọnweghị nke ekwenyere
Scratches (Si-Ihu) Qty.≤5,Nchịkọta
Ogologo≤0.5 × dayameta wafer
Qty.≤5,Nchịkọta
Ogologo≤0.5 × dayameta wafer
Qty.≤5,Nchịkọta
Ogologo≤0.5 × dayameta wafer
Mgbawa Ọnweghị nke ekwenyere
Mwepu ihu 3mm
第2页-2
第2页-1
SiC wafers

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