4 ″ 6 ″ SiC Substrate nke ọkara mkpuchi

Nkọwa dị mkpirikpi:

Ihe mgbochi SiC na-ekpuchi ọkara bụ ihe semiconductor nwere ihe mgbochi dị elu, yana ihe mgbochi dị elu karịa 100,000Ω · cm. A na-eji obere ihe mkpuchi SiC na-ekpuchi obere ihe iji rụpụta ngwaọrụ RF microwave dị ka ngwaọrụ RF gallium nitride microwave na transistor mobility dị elu (HEMTs). A na-ejikarị ngwaọrụ ndị a na mgbasa ozi 5G, nkwukọrịta satịlaịtị, radar na mpaghara ndị ọzọ.

 

 


Nkọwa ngwaahịa

Mkpado ngwaahịa

Semicera's 4" 6" Semi-Insulating SiC Substrate bụ ihe dị elu emebere iji zute ihe siri ike nke ngwa RF na ike ngwaọrụ. Mkpụrụ ahụ na-ejikọta ezigbo ọkụ ọkụ na nnukwu mgbawa voltaji nke silicon carbide na ihe mkpuchi nke ọkara, na-eme ka ọ bụrụ nhọrọ dị mma maka ịmepụta ngwaọrụ semiconductor dị elu.

4" 6" Semi-Insulating SiC Substrate ejiri nlezianya rụpụta ya iji hụ na ihe dị ọcha dị elu yana ịrụ ọrụ mkpuchi ọkara na-agbanwe agbanwe. Nke a na-eme ka a hụ na mkpụrụ osisi ahụ na-enye ikewapụ ọkụ eletrik dị mkpa na ngwaọrụ RF dị ka amplifiers na transistor, ebe ọ na-enyekwa arụmọrụ ọkụ chọrọ maka ngwa ike dị elu. Ihe si na ya pụta bụ ihe dị iche iche nke nwere ike iji mee ihe n'ọtụtụ dịgasị iche iche nke ngwaahịa eletrọnịkị dị elu.

Semicera ghọtara mkpa ọ dị ịnye ihe ndị a pụrụ ịdabere na ya, enweghị ntụpọ maka ngwa semiconductor dị oke mkpa. A na-emepụta mkpụrụ 4" 6" Semi-Insulating SiC Substrate site na iji usoro nrụpụta dị elu nke na-ebelata ntụpọ kristal ma melite otu ihe. Nke a na-enyere ngwaahịa aka ịkwado nrụpụta ngwaọrụ site na iji arụ ọrụ emelitere, nkwụsi ike na oge ndụ.

Nkwenye Semicera maka ịdịmma na-eme ka 4" 6" Semi-Insulating SiC Substrate na-ebuga arụmọrụ ntụkwasị obi yana agbanwe agbanwe n'ọtụtụ ngwa. Ma ị na-emepụta ngwaọrụ ugboro ugboro dị elu ma ọ bụ ihe ngwọta ike na-arụ ọrụ nke ọma, ihe mkpuchi SiC anyị na-ekpuchi obere ihe na-enye ntọala maka ịga nke ọma nke eletriki ọgbọ ọzọ.

Ntọala ntọala

Nha

6-anụ ọhịa 4-anụ ọhịa
Dayameta 150.0mm + 0mm/-0.2mm 100.0mm + 0mm/-0.5mm
Ntuzi ihu ihu {0001}±0.2°
Nhazi Flat nke izizi / <1120>±5°
Usoro nke abụọ Flat / Silicon chere ihu:90° CW si Prime flat士5°
Ogologo Flat nke izizi / 32.5 mm 士2.0 mm
Ogologo Flat nke abụọ / 18.0 mm; 2.0 mm
Nhazi ọkwa <1100>±1.0° /
Nhazi ọkwa 1.0mm + 0.25 mm/-0.00 mm /
Nkuku notch 90°+5°/-1° /
Ọkpụrụkpụ 500.0um士25.0um
Ụdị omume Ọkara mkpuchi

kristal àgwà ozi

ltem 6-anụ ọhịa 4-anụ ọhịa
Nguzogide ≥1E9Q·cm
Ụdị poly Ọnweghị nke enyere ikike
Njupụta Micropipe ≤0.5/cm2 ≤0.3/cm2
Hex Plates site na nnukwu ọkụ ọkụ Ọnweghị nke enyere ikike
Mgbakwunye Carbon a na-ahụ anya dị elu Mpaghara mkpokọta≤0.05%
4 6 Semi-Insulating SiC Substrate-2

Resistivity–Nwapụtara site na mgbochi mpempe akwụkwọ na-abụghị kọntaktị.

4 6 Semi-Insulating SiC Substrate-3

Njupụta Micropipe

4 6 Ọkara mkpuchi SiC Substrate-4
SiC wafers

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