Ụdị N-ụdị 4 inch nke SiC

Nkọwa dị mkpirikpi:

Semicera na-enye ọtụtụ 4H-8H SiC wafers. Ruo ọtụtụ afọ, anyị bụ onye na-emepụta ihe na onye na-ebubata ngwaahịa na ụlọ ọrụ semiconductor na fotovoltaic. Isi ngwaahịa anyị gụnyere: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer ụgbọ mmiri (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, yana CVD SiC mkpuchi na. Ihe mkpuchi TaC. Na-ekpuchi ọtụtụ ahịa Europe na America. Anyị na-atụ anya ịbụ onye mmekọ gị ogologo oge na China.

 

Nkọwa ngwaahịa

Mkpado ngwaahịa

tech_1_2_size

Silicon carbide (SiC) otu ihe kristal nwere nnukwu oghere obosara (~ Si 3 ugboro), ịdị elu nke thermal conductivity (~ Si 3.3 ugboro ma ọ bụ GaAs ugboro 10), ọnụego mgbanwe saturation elektrọn dị elu (~ Si 2.5 ugboro), ọkụ eletrik dị elu. ubi (~ Si ugboro 10 ma ọ bụ GaAs 5 ugboro) na njirimara ndị ọzọ pụtara ìhè.

Ike Semicera nwere ike inye ndị ahịa ihe nrụpụta dị elu (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity Semi-insulating) silicon carbide substrate; Na mgbakwunye, anyị nwere ike inye ndị ahịa akwụkwọ mpempe akwụkwọ nke silicon carbide dị iche iche na nke dị iche iche; Anyị nwekwara ike hazie mpempe akwụkwọ epitaxial dị ka mkpa ndị ahịa si dị, ọ nweghịkwa ọnụọgụ kacha nta.

Ihe

Mmepụta

Nnyocha

Dummy

kristal Parameters

Ụdị poly

4H

Njehie nhazi ihu elu

<11-20>4±0.15°

Igwe ọkụ eletrik

Dopant

n-ụdị Nitrogen

Nguzogide

0.015-0.025ohm·cm

Mechanical Parameters

Dayameta

99.5-100mm

Ọkpụrụkpụ

350± 25 μm

Ntuzi aka dị larịị

[1-100]±5°

Ogologo larịị nke isi

32.5 ± 1.5mm

Ọkwa dị larịị nke abụọ

90° CW site na larịị ± 5° nke mbụ. silicon ihu elu

Ogologo larịị nke abụọ

18 ± 1.5mm

TTV

≤5 μm

≤10 μm

≤20 μm

LTV

≤2 μm (5mm*5mm)

≤5 μm (5mm*5mm)

NA

Ụta

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤20 μm

≤45 μm

≤50 μm

Ihu (Si-face) adịghị ike (AFM)

Ra≤0.2nm (5μm*5μm)

Nhazi

Njupụta Micropipe

≤1 ea/cm2

≤5 ea/cm2

≤10 ea/cm2

Igwe adịghị ọcha

≤5E10atom/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ogo ihu

N'ihu

Si

Ngwucha elu

Si-ihu CMP

Ụmụ irighiri ihe

≤60ea/wafer (nha≥0.3μm)

NA

Ọkpụkpụ

≤2ea/mm. Ogologo ngụkọta ≤ Dayameta

Ogologo ngụkọta ≤2* dayameta

NA

Peel oroma / olulu / ntụpọ / striations / mgbawa / mmetọ

Ọ dịghị

NA

Iberibe ibe / indents / mgbaji / hex

Ọ dịghị

NA

Mpaghara polytype

Ọ dịghị

Mpaghara mkpokọta≤20%

Mpaghara mkpokọta≤30%

Akara laser n'ihu

Ọ dịghị

Ogo azụ

Ngwucha azụ

C-ihu CMP

Ọkpụkpụ

≤5ea/mm, Mgbakọ ogologo≤2* dayameta

NA

Nrụrụ azụ (nkịta ihu/indents)

Ọ dịghị

Azụ isi ike

Ra≤0.2nm (5μm*5μm)

Akara laser azụ

1 mm (si n'akụkụ elu)

Ọnụ

Ọnụ

Chamfer

Nkwakọ ngwaahịa

Nkwakọ ngwaahịa

Akpa dị n'ime juputara na nitrogen ma kpochapu akpa nke dị n'èzí.

Multi-wafer cassette, epi-njikere.

* Ihe edeturu: "NA" pụtara enweghị arịrịọ Ihe anaghị ekwupụta nwere ike na-ezo aka na SEMI-STD.

SiC wafers

Ụlọ ọrụ Semicera Ụlọ ọrụ Semicera 2 Igwe eji eme ihe Nhazi CNN, nhicha kemịkalụ, mkpuchi CVD Ọrụ anyị


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