1. BanyereSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers na-etolite site n'itinye otu oyi akwa kristal na wafer na-eji silicon carbide otu kristal wafer dị ka mkpụrụ, na-abụkarị site na ntinye vapor (CVD). N'ime ha, silicon carbide epitaxial na-akwado ya site na-eto eto silicon carbide epitaxial oyi akwa na conductive silicon carbide mkpụrụ, na-emepụta ọzọ na-arụ ọrụ dị elu ngwaọrụ.
2.Silicon Carbide Epitaxial WaferNkọwapụta
Anyị nwere ike ịnye 4, 6, 8 inch N-ụdị 4H-SiC epitaxial wafers. The epitaxial wafer nwere nnukwu bandwit, elu saturation eletrọn drift ọsọ, elu na-agba abụọ akụkụ abụọ ike ubi ike ndakpọ. Ihe ndị a na-eme ka ngwaọrụ ahụ dị elu na-eguzogide okpomọkụ, elu voltaji na-eguzogide, ngwa ngwa na-agbanwe ọsọ ọsọ, obere na-eguzogide, obere nha na ịdị arọ.
3. Ngwa SiC Epitaxial
SiC epitaxial waferA na-ejikarị na Schottky diode (SBD), metal oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), nke a na-eji. na obere voltaji, ọkara-voltaji na nnukwu voltaji. Ugbu a,SiC epitaxial wafersmaka ngwa voltaji dị elu nọ na nyocha na mmepe mmepe n'ụwa niile.
