Mgbochi ọxịdashọn dị elu SiC mkpuchi MOCVD tray

Mgbochi oxidation dị ọcha SiC mkpuchi MOCVD tray egosipụtara

Nkọwa dị mkpirikpi:

Semicera Energy Technology Co., Ltd bụ onye na-eweta ndị na-ebubata ọkachamara na wafer na ihe oriri semiconductor dị elu.Anyị raara onwe anyị nye inye ngwaahịa dị elu, ntụkwasị obi, na ihe ọhụrụ maka nrụpụta semiconductor,ụlọ ọrụ fotovoltaicna mpaghara ndị ọzọ metụtara ya.

Ahịrị ngwaahịa anyị gụnyere ngwaahịa graphite nke SiC / TaC na ngwaahịa seramiiki, gụnyere ihe dị iche iche dị ka silicon carbide, silicon nitride, na aluminum oxide na wdg.

Dị ka onye na-ebubata ntụkwasị obi, anyị ghọtara mkpa ihe oriri na-emepụta na usoro mmepụta ihe, anyị na-agbakwa mbọ na-ebuga ngwaahịa ndị na-agbaso ụkpụrụ kachasị elu iji mezuo mkpa ndị ahịa anyị.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Nkọwa

Ụlọ ọrụ anyị na-enyemkpuchi SiCusoro ọrụ site na usoro CVD n'elu graphite, ceramics na ihe ndị ọzọ, nke mere na gas pụrụ iche nwere carbon na silicon na-emeghachi omume na okpomọkụ dị elu iji nweta mkpụrụ ndụ SiC dị ọcha, ụmụ irighiri ihe ndị a na-etinye n'elu ihe ndị a na-ekpuchi, na-akpụ a.oyi akwa mkpuchi SiC.

Isi atụmatụ

1. Nguzogide oxidation dị elu:
Nguzogide oxidation ka dị ezigbo mma mgbe okpomọkụ dị elu dị ka 1600 C.
2. Nnukwu ịdị ọcha: nke a na-eme site na ntinye ikuku kemịkalụ n'okpuru ọnọdụ chlorination dị elu.
3. Nguzogide nbibi: elu ike, kọmpat elu, ezigbo ahụ.
4. Nguzogide corrosion: acid, alkali, nnu na organic reagents.

Nkọwa isi nke mkpuchi CVD-SIC

Njirimara SiC-CVD
Ọdịdị kristal	FCC β oge
Njupụta	g/cm ³	3.21
Isi ike	Vickers isi ike	2500
Nha ọka	μm	2 ~ 10
Ịdị ọcha kemịkalụ	%	99,99995
Ike ikpo ọkụ	J·kg-1 · K-1	640
Sublimation okpomọkụ	℃	2700
Ike Felexural	MPa (RT 4-isi)	415
Modul nke Young	GPA (4pt gbagọọ, 1300 ℃)	430
Mgbasawanye okpomọkụ (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300