Ogologo Ndụ Ọrụ SiC mkpuchi ihe eserese maka Wafer anyanwụ

Ogologo Ndụ Ọrụ SiC mkpuchi ihe eserese maka onyonyo egosipụtara na Wafer anyanwụ

Nkọwa dị mkpirikpi:

Silicon carbide bụ ụdị ceramik ọhụrụ nwere arụmọrụ dị oke ọnụ yana akụrụngwa akụrụngwa mara mma. N'ihi njirimara dị ka ike dị elu na ike siri ike, oke okpomọkụ na-eguzogide, nnukwu okpomọkụ conductivity na chemical corrosion resistance, Silicon Carbide nwere ike ọ fọrọ nke nta ka ọ ghara iguzogide ọgwụ niile. Ya mere, a na-eji SiC eme ihe na ngwuputa mmanụ, kemịkalụ, igwe na ikuku, ọbụna ike nuklia na ndị agha nwere ihe ha chọrọ na SIC. Ụfọdụ ngwa nkịtị anyị nwere ike ịnye bụ mgbanaka akara maka mgbapụta, valvụ na ihe agha nchebe wdg.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Uru

Nguzogide oxidation dị elu
Nguzogide corrosion mara mma
Ezigbo nguzogide abrasion
Ọnụ ọgụgụ dị elu nke conductivity okpomọkụ
Mmanya onwe onye, obere njupụta
Isi ike dị elu
Nhazi ahaziri.

Ngwa

- Ubi na-eguzogide ọgwụ: ịhịa aka n'ahụ, efere, mmiri na-agbapụta ájá, mkpuchi cyclone, gbọmgbọm egweri, wdg ...
-Akụkụ dị elu: siC Slab, Quenching Furnace Tube, Radiant Tube, Crucible, Heat Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC ụgbọ mmiri, Kiln ụgbọ ala Structure, Setter, wdg.
-Silicon Carbide Semiconductor: SiC wafer ụgbọ mmiri, sic chuck, sic paddle, sic cassette, sic diffusion tube, wafer ndụdụ, mmiri ara ehi, ụzọ ụzọ, wdg.
-Silicon Carbide Seal Field: ụdị mgbanaka akara niile, ibu, ahịhịa, wdg.
-Ubi fotovoltaic: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller, wdg.
- Ubi batrị lithium

WAFER (1)

WAFER (2)

Njirimara anụ ahụ SiC

Ngwongwo	Uru	Usoro
Njupụta	3.21 g/cc	Sink-ese n'elu na nha
Okpomọkụ akọwapụtara	0.66 J/g °K	Igwe ọkụ laser gbara agba
Ike mgbanwe	450 MPa 560 MPa	Ehulata isi 4, isi ihe RT4, 1300°
Mgbaji siri ike	2.94 MPa m1/2	Microindentation
Isi ike	2800	Vicker, ibu 500 g
Modulus nke na-agbanwe agbanwe	450 GPa430	4 pt gbagọọ, RT4 pt gbagọọ, 1300 °C
Nha ọka	2-10 µm	SEM

Njirimara Thermal nke SiC

Nrụpụta okpomọkụ	250 W/m °K	Laser flash usoro, RT
Mgbasawanye okpomọkụ (CTE)	4.5 x 10-6 °K	Okpomọkụ ụlọ ruo 950 Celsius C, silica dilatometer

Nka nka

Ihe	Nkeji	Data
Ihe	Nkeji	RBSiC (SiSiC)	NBSiC	SSiC	RSiC	OsiC
Ọdịnaya SiC	%	85	75	99	99.9	≥99
Ọdịnaya silicon efu	%	15	0	0	0	0
Oke ọrụ okpomọkụ	℃	1380	1450	1650	1620	1400
Njupụta	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Mepee porosity	%	0	13-15	0	15-18	7-8
Ike na-ehulata 20 ℃	Nna	250	160	380	100	/
Ehulata ike 1200 ℃	Nna	280	180	400	120	/
Modul nke elasticity 20 ℃	Gpa	330	580	420	240	/
Modul nke elasticity 1200 ℃	Gpa	300	/	/	200	/
Thermal conductivity 1200 ℃	W/mK	45	19.6	100-120	36.6	/
Ọnụọgụ nke mgbasawanye thermal	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

Ihe mkpuchi silicon carbide nke CVD dị n'elu elu nke ngwaahịa seramiiki silicon carbide recrystallized nwere ike iru ịdị ọcha karịa 99.9999% iji gboo mkpa ndị ahịa na ụlọ ọrụ semiconductor.