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Nke a na-eji usoro PVT toro crucible, njide mkpụrụ na mgbanaka ntuziaka na SiC na AIN otu ọkụ kristal.
Dị ka egosiri na eserese 2 [1], mgbe a na-eji usoro mbufe ikuku anụ ahụ (PVT) kwadebe SiC, kristal mkpụrụ dị na mpaghara okpomọkụ dị ntakịrị, ihe ọkụkụ SiC dị na mpaghara okpomọkụ dị elu (n'elu 2400).℃), na akụrụngwa na-emebi emebi iji mepụta SiXCy (gụnyere Si, SiC₂, Si₂C, wdg). A na-ebufe ihe na-emepụta ihe na-ekpo ọkụ site na mpaghara okpomọkụ dị elu gaa na kristal mkpụrụ na mpaghara okpomọkụ dị ala, fmkpụrụ irighiri mkpụrụ akụ, na-eto eto ma na-emepụta otu kristal. Ihe ndị a na-ekpo ọkụ na-eji eme ihe na usoro a, dị ka crucible, mgbanaka nduzi na-asọpụta, ihe na-ejide mkpụrụ kristal, kwesịrị ịdị na-eguzogide okpomọkụ dị elu na ọ gaghị emerụ ihe ndị SiC na kristal SiC. N'otu aka ahụ, ihe ndị na-ekpo ọkụ na uto nke AlN single crystals kwesịrị iguzogide Al vapor, N₂corrosion, na mkpa inwe oke eutectic okpomọkụ (ya na AlN) iji belata oge nkwadebe kristal.
Achọpụtara na SiC[2-5] na AlN[2-3] kwadoro site naTaC kpuchiegraphite thermal ubi ihe dị ọcha, ọ fọrọ nke nta ka ọ dịghị carbon (oxygen, nitrogen) na ndị ọzọ adịghị ọcha, ole na ole ntụpọ ntụpọ, nta resistivity na mpaghara ọ bụla, na micropore njupụta na etching olulu njupụta nke ukwuu belatara (mgbe KOH etching), na crystal àgwà. emelitere nke ukwuu. Na mgbakwunye,TaC dị nroỌnụ ọgụgụ dị arọ fọrọ nke nta ka ọ bụrụ efu, ọdịdị adịghị emebi emebi, enwere ike ịmegharị ya (ndụ ruo 200h), nwere ike melite nkwado na arụmọrụ nke otu nkwadebe kristal dị otú ahụ.
FIG. 2. (a) Eserese eserese nke SiC otu kristal ingot na-eto eto site na usoro PVT
(b) N'eluTaC kpuchienkwado mkpụrụ (gụnyere mkpụrụ SiC)
(c)mgbanaka ntuziaka graphite nwere mkpuchi TAC
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MOCVD GaN epitaxial oyi akwa na-eto eto
Dịka egosiri na eserese 3 (a), uto MOCVD GaN bụ teknụzụ ntinye mmiri nke kemịkalụ na-eji mmeghachi omume decomposition organometric na-eto eto ihe nkiri dị mkpa site na uzuoku epitaxial uto. Izi ezi okpomọkụ na ịdị n'otu n'ime oghere na-eme ka ikpo ọkụ bụrụ ihe kachasị mkpa nke akụrụngwa MOCVD. Ma mkpụrụ nwere ike kpụ ọkụ n'ọnụ ngwa ngwa na uniformly ruo ogologo oge (n'okpuru ugboro jụrụ oyi), nkwụsi ike na elu okpomọkụ (na-eguzogide gas corrosion) na ịdị ọcha nke ihe nkiri ahụ ga-emetụta kpọmkwem àgwà nke film deposition, na ọkpụrụkpụ agbanwe agbanwe, na arụmọrụ nke mgbawa.
Iji meziwanye arụmọrụ na ịrụgharị ọrụ nke ọkụ ọkụ na usoro MOCVD GaN.Ekpuchiri TACewebata ikpo ọkụ graphite nke ọma. E jiri ya tụnyere GaN epitaxial oyi akwa toro site na kpo oku ochie (iji mkpuchi pBN), GaN epitaxial oyi akwa nke TaC kpo oku nwere ihe fọrọ nke nta ka ọ bụrụ otu ụdị kristal, nha nha nha, ntụpọ dị n'ime, doping adịghị ọcha na mmetọ. Na mgbakwunye, ndịMkpuchi TaCnwere obere resistivity na ala elu emissivity, nke nwere ike imeziwanye arụmọrụ na ịdị n'otu nke ikpo ọkụ, si otú ahụ belata ike oriri na okpomọkụ ọnwụ. Enwere ike gbanwee porosity nke mkpuchi site na ịchịkwa usoro usoro iji meziwanye àgwà radieshon nke ikpo ọkụ na ịgbatị ndụ ọrụ ya [5]. Uru ndị a na-emeTaC kpuchiendị na-ekpo ọkụ graphite bụ nhọrọ magburu onwe ya maka usoro uto MOCVD GaN.
FIG. 3. (a) Eserese eserese nke ngwaọrụ MOCVD maka uto epitaxial GaN
(b) Igwe ọkụ graphite nwere mkpuchi TAC arụnyere na ntọala MOCVD, ewezuga ntọala na bracket (ihe atụ na-egosi ntọala na nkwado na kpo oku)
(c) Igwe ọkụ graphite nwere mkpuchi TAC mgbe 17 GaN epitaxial uto. [6]
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Ihe mkpuchi mkpuchi maka epitaxy (bufe wafer)
Onye na-ebu Wafer bụ ihe dị mkpa eji arụ ọrụ maka nkwadebe nke SiC, AlN, GaN na ndị ọzọ semiconductor wafers na epitaxial wafer. Ọtụtụ n'ime ndị na-ebu wafer bụ nke graphite ma kpuchie ya na mkpuchi SiC iji guzogide corrosion sitere na gas na-arụ ọrụ, yana oke okpomọkụ nke epitaxial nke 1100 ruo 1600.°C, na nguzogide corrosion nke mkpuchi nchebe na-arụ ọrụ dị mkpa na ndụ nke onye na-ebu wafer. Nsonaazụ gosiri na ọnụ ọgụgụ corrosion nke TaC bụ 6 ugboro ji nwayọọ nwayọọ karịa SiC na amonia okpomọkụ dị elu. Na hydrogen dị elu nke okpomọkụ, ọnụ ọgụgụ corrosion na-adị ọbụna karịa 10 ugboro iji nwayọọ karịa SiC.
E gosiputara ya site na nnwale na trays ndị ejiri TaC kpuchie na-egosi ndakọrịta dị mma na usoro GaN MOCVD na-acha anụnụ anụnụ na anaghị ewebata adịghị ọcha. Mgbe mmezigharị usoro nwere ntakịrị, leds toro site na iji ndị na-ebu TaC na-egosipụta otu arụmọrụ yana otu dị ka ndị na-ebu SiC. Ya mere, ndụ ọrụ nke pallets mkpuchi TAC dị mma karịa nke ink nkume efu naSiC kpuchiegraphite pallets.
Oge nzipu: Mar-05-2024