1. Gịnị mere e nwere asilicon carbide mkpuchi
Okpokoro epitaxial bụ ihe nkiri dị mkpa kristal akọwapụtara na ndabere nke wafer site na usoro epitaxial. A na-akpọkọta wafer nke mkpụrụ osisi na ihe nkiri dị mkpa nke epitaxial epitaxial wafers. N'ime ha, ndịsilicon carbide epitaxialA na-etolite akwa oyi akwa na mkpụrụ osisi silicon carbide na-eduzi iji nweta silicon carbide homogeneous epitaxial wafer, nke enwere ike ime ka ọ bụrụ ngwaọrụ ike dị ka Schottky diodes, MOSFETs, na IGBTs. N'ime ha, nke a na-ejikarị bụ 4H-SiC substrate.
Ebe ọ bụ na ngwaọrụ niile na-aghọta na epitaxy, àgwà nkeepitaxynwere mmetụta dị ukwuu na arụmọrụ nke ngwaọrụ ahụ, ma àgwà nke epitaxy na-emetụta nhazi nke kristal na substrates. Ọ bụ na njikọ etiti nke ụlọ ọrụ ma na-arụ ọrụ dị oke egwu na mmepe nke ụlọ ọrụ ahụ.
Ụzọ ndị bụ isi maka ịkwadebe silicon carbide epitaxial layers bụ: usoro uto evaporation; mmiri mmiri epitaxy (LPE); molecular beam epitaxy (MBE); kemịkalụ vapor deposition (CVD).
N'ime ha, ntinye mmiri mmiri kemịkalụ (CVD) bụ usoro homoepitaxial 4H-SiC kacha ewu ewu. 4-H-SiC-CVD epitaxy n'ozuzu na-eji CVD akụrụngwa, nke nwere ike hụ na n'ihu nke epitaxial oyi akwa 4H crystal SiC n'okpuru elu ibu okpomọkụ ọnọdụ.
N'ime akụrụngwa CVD, enweghị ike itinye mkpụrụ ahụ ozugbo na igwe ma ọ bụ tinye ya na ntọala maka ntinye epitaxial, n'ihi na ọ gụnyere ihe dị iche iche dị ka ntụzịaka ikuku gas (nke kwụ ọtọ, kwụ ọtọ), ọnọdụ okpomọkụ, nrụgide, ndozi, na mmetọ na-ada. Ya mere, a na-achọ ntọala, mgbe ahụ, a na-etinye mkpụrụ ahụ na diski ahụ, mgbe ahụ, a na-eme ihe ntinye epitaxial na mkpụrụ osisi site na iji teknụzụ CVD. Ntọala a bụ ntọala graphite mkpuchi SiC.
Dị ka a isi akụrụngwa, graphite isi nwere àgwà nke elu kpọmkwem ike na modul kpọmkwem, ezigbo thermal ujo nguzogide na corrosion iguzogide, ma n'oge mmepụta usoro, graphite ga-corroded na powdered n'ihi na ihe fọdụrụ nke corrosive gas na metal organic. okwu, na ndụ ọrụ nke graphite isi ga-ebelata nke ukwuu.
N'otu oge ahụ, ntụ ntụ graphite dara ada ga-emerụ mgbawa ahụ. Na usoro mmepụta nke silicon carbide epitaxial wafers, ọ na-esiri ike izute ihe ndị mmadụ na-achọsi ike maka iji ihe graphite, nke na-egbochi mmepe ya na ngwa bara uru. Ya mere, teknụzụ mkpuchi malitere ịrị elu.
2. Uru nkemkpuchi SiC
Njirimara anụ ahụ na nke kemịkalụ nke mkpuchi nwere ihe siri ike maka oke okpomọkụ na nguzogide corrosion, nke na-emetụta kpọmkwem mkpụrụ na ndụ nke ngwaahịa ahụ. Ihe SiC nwere ike dị elu, isi ike dị elu, ọnụ ọgụgụ mgbasawanye ọkụ dị ala na ezigbo ikuku okpomọkụ. Ọ bụ ihe dị mkpa na-eme ka ọnọdụ okpomọkụ dị elu na ihe semiconductor dị elu. A na-etinye ya na ntọala graphite. Uru ya bụ:
-SiC na-eguzogide corrosion ma nwee ike kechie ntọala graphite n'ụzọ zuru ezu, ma nwee njupụta dị mma iji zere mmebi site na gas na-emebi emebi.
-SiC nwere ikike ikuku dị elu na ike njikọ dị elu na ntọala graphite, na-eme ka mkpuchi ahụ ghara ịdaba mgbe ọtụtụ okpomọkụ dị elu na obere okpomọkụ.
-SiC nwere ezigbo nkwụsi ike nke kemịkalụ iji gbochie mkpuchi ka ọ ghara ịdaba na okpomọkụ dị elu na ikuku na-emebi emebi.
Tụkwasị na nke ahụ, ọkụ ọkụ epitaxial nke ihe dị iche iche chọrọ trays graphite nwere ihe ngosi arụmọrụ dị iche iche. Ngwakọta mgbasawanye ọkụ na-ejikọta ihe ndị graphite chọrọ ime mgbanwe na okpomọkụ nke ọkụ ọkụ epitaxial. Dịka ọmụmaatụ, okpomọkụ nke silicon carbide epitaxial growth dị elu, na a chọrọ tray nke nwere nnukwu mgbasawanye ọkụ ọkụ na-ejikọta ya. Ọnụ ọgụgụ mgbasawanye nke okpomọkụ nke SiC dị nso na nke graphite, na-eme ka ọ dị mma dị ka ihe kachasị mma maka mkpuchi elu nke isi graphite.
Ngwa SiC nwere ụdị kristal dị iche iche, nke a na-ahụkarị bụ 3C, 4H na 6H. Ụdị kristal dị iche iche nke SiC nwere ojiji dị iche iche. Dịka ọmụmaatụ, enwere ike iji 4H-SiC rụpụta ngwaọrụ dị elu; 6H-SiC bụ ihe kwụsiri ike ma enwere ike iji ya rụpụta ngwaọrụ optoelectronic; Enwere ike iji 3C-SiC mepụta akwa epitaxial GaN ma rụpụta ngwaọrụ SiC-GaN RF n'ihi nhazi ya na GaN. A na-akpọkwa 3C-SiC dị ka β-SiC. Ojiji dị mkpa nke β-SiC bụ ihe nkiri dị mkpa na ihe mkpuchi. Ya mere, β-SiC ugbu a bụ isi ihe maka mkpuchi.
A na-ejikarị mkpuchi SiC eme ihe na mmepụta semiconductor. A na-ejikarị ha eme ihe na mkpụrụ, epitaxy, mgbasa oxidation, etching na ntinye ion. Njirimara anụ ahụ na nke kemịkalụ nke mkpuchi nwere ihe siri ike chọrọ na oke okpomọkụ na nguzogide corrosion, nke na-emetụta kpọmkwem mkpụrụ na ndụ nke ngwaahịa ahụ. Ya mere, nkwadebe nke mkpuchi SiC dị oke egwu.
Oge nzipu: Jun-24-2024