Usoro nrụpụta ngwaọrụ SiC Silicon Carbide (1)

Dị ka anyị maara, na mpaghara semiconductor, otu silicon kristal (Si) bụ ihe a na-ejikarị eme ihe na nke kachasị ukwuu n'ụwa. Ugbu a, ihe karịrị 90% nke ngwaahịa semiconductor na-eji ihe dabere na silicon. Site na ịrị elu nke ngwa ike dị elu na ngwaọrụ voltaji dị elu na mpaghara ike ọgbara ọhụrụ, etinyela ihe ndị siri ike maka ihe ndị dị mkpa nke ihe semiconductor dị ka obosara bandgap, ike mgbaka ọkụ eletrik, ọnụego saturation elektrọn, na conductivity thermal. N'okpuru ọnọdụ a, nnukwu bandgap semiconductor ihe na-anọchi anya yasilicon carbide(SiC) apụtala dị ka ọmarịcha ngwa njupụta ike dị elu.

Dị ka ihe mejupụtara semiconductor,silicon carbidedị oke ụkọ na okike ma na-apụta n'ụdị moissanite ịnweta. Ka ọ dị ugbu a, ihe fọrọ nke nta ka ọ bụrụ silicon carbide niile a na-ere n'ụwa bụ ihe eji arụ ọrụ nke ọma. Silicon carbide nwere uru nke isi ike dị elu, ịdị elu na-ekpo ọkụ, nkwụsi ike dị mma na ọkụ eletrik dị oke egwu. Ọ bụ ihe dị mma maka ịmepụta ngwaọrụ semiconductor dị elu na ike dị elu.

Yabụ, kedu ka esi arụpụta ngwaọrụ semiconductor silicon carbide?

Kedu ihe dị iche n'etiti usoro nrụpụta ngwaọrụ silicon carbide na usoro mmepụta nke dabere na silicon? Malite na mbipụta a, "Ihe gbasaraNgwa Silicon CarbideNrụpụta” ga-ekpughe ihe nzuzo ndị ahụ otu otu.

I

Usoro eruba nke silicon carbide ngwaọrụ n'ichepụta

Usoro nrụpụta nke ngwaọrụ silicon carbide na-adịkarị ka nke ngwaọrụ ndị sitere na silicon, ọkachasị gụnyere fotolithography, nhicha, doping, etching, imepụta ihe nkiri, ịhịa aka n'ahụ na usoro ndị ọzọ. Ọtụtụ ndị na-emepụta ngwaọrụ ike nwere ike gboo mkpa nrụpụta nke ngwaọrụ silicon carbide site na ịkwalite ahịrị mmepụta ha dabere na usoro nrụpụta silicon. Otú ọ dị, ihe pụrụ iche nke silicon carbide ihe na-ekpebi na ụfọdụ usoro na ngwaọrụ ya n'ichepụta mkpa ịdabere na ngwá ọrụ pụrụ iche maka mmepe pụrụ iche iji mee ka silicon carbide ngwaọrụ nagide elu voltaji na elu ugbu a.

II

Okwu mmalite nke silicon carbide usoro modul pụrụ iche

Modul usoro pụrụ iche nke silicon carbide na-ekpuchikwa doping injection, nhazi ọnụ ụzọ ámá, morphology etching, metallization, na thinning usoro.

(1) Injection doping: N'ihi nnukwu carbon-silicon bond ume na silicon carbide, atom adịghị ọcha na-esi ike ịgbasa na silicon carbide. Mgbe ị na-akwadebe ngwaọrụ silicon carbide, doping nke njikọ PN nwere ike nweta naanị site na ntinye ion na oke okpomọkụ.
A na-ejikarị ion na-adịghị ọcha dị ka boron na phosphorus eme doping, na omimi doping na-abụkarị 0.1μm ~ 3μm. Ịkụnye ion ike dị elu ga-ebibi usoro lattice nke ihe silicon carbide n'onwe ya. A na-achọ ka anneal okpomọkụ dị elu iji mezie mmebi lattice kpatara site na ntinye ion ma na-achịkwa mmetụta nke ntanye n'elu ala. Usoro ndị bụ isi bụ ntinye ion dị elu na okpomọkụ na-ekpo ọkụ.

Ọgụgụ 1 Eserese atụmatụ nke ntinye ion na mmetụta mmekpa ahụ dị elu

(2) Nhazi nhazi nke ọnụ ụzọ ámá: Ogo nke interface SiC / SiO2 nwere mmetụta dị ukwuu na ịkwaga ọwa na ntụkwasị obi ọnụ ụzọ MOSFET. Ọ dị mkpa ịzụlite kpọmkwem ọnụ ụzọ ámá oxide na post-oxidation annealing usoro iji kwụọ ụgwọ maka agbụ agbụ na SiC / SiO2 interface na pụrụ iche atọm (dị ka nitrogen atọm) izute arụmọrụ chọrọ nke elu-edu SiC / SiO2 interface na elu. Mbugharị nke ngwaọrụ. Isi usoro bụ ọnụ ụzọ ámá oxide elu-okpomọkụ oxidation, LPCVD, na PECVD.

Onyonyo 2 Eserese atụmatụ nke ndenye ihe nkiri oxide nkịtị na oxidation dị elu

(3) Morphology etching: Silicon carbide material bụ inert na chemical solvents, na kpọmkwem morphology akara nwere ike nweta nanị site akọrọ etching ụzọ; ihe nkpuchi, nkpuchi etching nhọrọ, agwakọta gas, sidewall akara, etching ọnụego, sidewall roughness, wdg mkpa ka e mepụtara dị ka e ji mara silicon carbide ihe. Usoro ndị bụ isi bụ ntinye ihe nkiri dị mkpa, fotolithography, corrosion ihe nkiri dielectric, na usoro etching akọrọ.

Onyonyo 3 Eserese atụmatụ nke usoro etching silicon carbide

(4) Metallization: Isi iyi nke ngwaọrụ chọrọ igwe ka ọ mepụta ezigbo kọntaktị ohmic dị ala na silicon carbide. Nke a ọ bụghị naanị na-achọ ịhazi usoro ntinye igwe na ịchịkwa ọnọdụ interface nke kọntaktị metal-semiconductor, kamakwa ọ na-achọ ka anneal okpomọkụ dị elu iji belata ihe mgbochi Schottky dị elu ma nweta metal-silicon carbide ohmic kọntaktị. Isi usoro bụ igwe magnetron sputtering, evaporation eletrọn, na ọkụ ọkụ ngwa ngwa.

Onyonyo 4 Eserese nke ụkpụrụ magnetron sputtering na mmetụta metallization

(5) Usoro nke ịhịa aka n'ahụ: Silicon carbide ihe nwere njirimara nke ịdị elu siri ike, nnukwu mgbawa na obere mgbaji siri ike. Usoro nchicha ya na-adịkarị mfe ime ka mgbaji na-agbaji agbaji nke ihe ahụ, na-eme ka ọkpụkpụ wafer na ala dị n'okpuru ala. Ọ dị mkpa ka e mepụta usoro egweri ọhụrụ iji gboo mkpa nrụpụta nke ngwaọrụ silicon carbide. Isi usoro bụ thinning nke egweri diski, film arapara na peeling, wdg.

Onyonyo 5 Eserese atụmatụ nke ụkpụrụ egweri wafer