Silicon carbide History na Silicon Carbide mkpuchi ngwa

Mmepe na ngwa nke Silicon Carbide (SiC)

1. Otu narị afọ nke Innovation na SiC
Njem nke silicon carbide (SiC) malitere na 1893, mgbe Edward Goodrich Acheson haziri ọkụ Acheson, na-eji ihe carbon iji nweta mmepụta mmepụta nke SiC site na ọkụ eletrik nke quartz na carbon. Ihe mepụtara akara mmalite nke nrụpụta SiC wee nweta Acheson patent.

Na mmalite narị afọ nke 20, a na-eji SiC eme ihe dị ka ihe abrasive n'ihi ike siri ike ya dị ịrịba ama na iyi nguzogide. Ka ọ na-erule etiti narị afọ nke 20, ọganihu na teknụzụ vapor deposition (CVD) emepeela ohere ọhụrụ. Ndị na-eme nchọpụta na Bell Labs, nke Rustum Roy na-edu, tọrọ ntọala maka CVD SiC, na-enweta mkpuchi mbụ nke SiC n'elu graphite.

N'afọ ndị 1970 hụrụ nnukwu ọganihu mgbe Union Carbide Corporation tinyere graphite nwere mkpuchi SiC na uto epitaxial nke gallium nitride (GaN) semiconductor ihe. Ọganihu a rụrụ ọrụ dị mkpa na LEDs na lasers dabere na GaN dị elu. N'ime ọtụtụ iri afọ, mkpuchi SiC agbasawanye karịa semiconductor na ngwa n'ime ikuku, ụgbọ ala, na ngwa elektrọnik, ekele maka mmelite na usoro nrụpụta.

Taa, ihe ọhụrụ dị ka spraying thermal, PVD, na nanotechnology na-eme ka arụmọrụ na ntinye nke mkpuchi SiC dịkwuo elu, na-egosipụta ikike ya n'ọhịa dị elu.

2. Ịghọta SiC's Crystal Structures and Jiri
SiC na-anya isi ihe karịrị 200 polytypes, nke a na-ahazi site na nhazi atọm n'ime cubic (3C), hexagonal (H), na rhombohedral (R). N'ime ndị a, a na-eji 4H-SiC na 6H-SiC eme ihe n'ọtụtụ ebe na ike dị elu na ngwaọrụ optoelectronic, n'otu n'otu, ebe a na-eji β-SiC kpọrọ ihe maka nrụpụta okpomọkụ ya dị elu, na-eyi nguzogide, na nkwụsị corrosion.

β-SiCpụrụ iche Njirimara, dị ka thermal conductivity nke120-200 W/m·Kna ọnụọgụ mgbasawanye ọkụ na-ejikọta graphite, mee ka ọ bụrụ ihe kachasị amasị maka mkpuchi elu na ngwa epitaxy wafer.

3. Ihe mkpuchi SiC: Njirimara na Usoro Nkwadebe
A na-etinye ihe mkpuchi SiC, nke na-abụkarị β-SiC, iji kwalite njirimara elu dị ka isi ike, iyi nguzogide, na nkwụsi ike ọkụ. Ụzọ ndị a na-ejikarị eme nkwadebe gụnyere:

• Mkpokọta uzuoku kemịkalụ (CVD):Na-enye akwa mkpuchi dị elu nke ọma na nchikota na ịdị n'otu, dị mma maka nnukwu ihe dị mgbagwoju anya.
• Ntụnye uzuoku anụ ahụ (PVD):Na-enye njikwa ziri ezi n'elu ihe mkpuchi mkpuchi, dabara maka ngwa nkenke dị elu.
• Usoro ịgbasa, Ndobe Electrochemical, na mkpuchi slurry: Na-eje ozi dị ka ụzọ dị ọnụ ahịa maka ngwa a kapịrị ọnụ, n'agbanyeghị na enwere oke dị iche iche na nrapado na otu.

A na-ahọrọ usoro ọ bụla dabere na njirimara mkpụrụ na ngwa chọrọ.

4. Ihe mkpuchi eserese SiC nwere mkpuchi na MOCVD
Ihe mkpuchi graphite nwere mkpuchi SiC dị mkpa na Metal Organic Chemical Vapor Deposition (MOCVD), usoro bụ isi na semiconductor na nrụpụta ihe optoelectronic.

Ndị na-ahụ maka ihe ndị a na-enye nkwado siri ike maka uto ihe nkiri epitaxial, na-eme ka nkwụsi ike nke okpomọkụ na ibelata mmetọ adịghị ọcha. Ihe mkpuchi SiC na-akwalitekwa nguzogide oxidation, ihe ndị dị n'elu, na njirimara interface, na-eme ka njikwa ziri ezi n'oge uto ihe nkiri.

5. Na-aga n'ihu n'Ọdịnihu
N'ime afọ ndị na-adịbeghị anya, a na-eduzi mgbalị dị ukwuu n'ịkwalite usoro mmepụta nke mkpụrụ osisi graphite nwere mkpuchi SiC. Ndị na-eme nchọpụta na-elekwasị anya n'ịkwalite ịdị ọcha mkpuchi, ịdị n'otu, na ogologo ndụ ka ha na-ebelata ọnụ ahịa. Na mgbakwunye, nyocha nke ihe ọhụrụ dị katantalum carbide (TaC) mkpuchina-enye nkwalite nwere ike na conductivity thermal na nguzogide corrosion, na-emeghe ụzọ maka ngwọta ọgbọ ọzọ.

Ka ọchịchọ nke ndị na-ahụ maka graphite nwere mkpuchi SiC na-aga n'ihu na-eto eto, ọganihu n'ichepụta ọgụgụ isi na mmepụta ihe mmepụta ihe ga-akwadosi ike ịmepụta ngwaahịa dị elu iji gboo mkpa mgbanwe nke ụlọ ọrụ semiconductor na optoelectronics.