Semicera Semiconductor na-ezube ịbawanye mmepụta nke ihe ndị bụ isi maka akụrụngwa nrụpụta semiconductor n'ụwa niile. Site na 2027, anyị bu n'obi guzobe ụlọ ọrụ mmepụta ihe ọhụrụ 20,000 square mita na ngụkọta ego nke 70 nde USD. Otu n'ime ihe ndị bụ isi anyị, ndịsilicon carbide (SiC) wafer ebu, makwaara dị ka onye susceptor, ahụla ọganihu dị ịrịba ama. Yabụ, kedu ihe traị a na-ejide wafer?
N'ime usoro nrụpụta wafer, a na-ewu akwa epitaxial na ụfọdụ mkpụrụ wafer iji mepụta ngwaọrụ. Dịka ọmụmaatụ, a na-akwadebe akwa akwa nke GaAs na silicon substrates maka ngwaọrụ LED, SiC epitaxial layers na-etolite na ntinye SiC na-eduzi maka ngwa ike dị ka SBDs na MOSFETs, na GaN epitaxial layers na-ewu n'elu ihe mkpuchi SiC na-ekpuchi maka ngwa RF dị ka HEMTs. . Usoro a na-adabere na yaMkpokọta ikuku kemịkalụ (CVD)akụrụngwa.
N'ime akụrụngwa CVD, enweghị ike itinye ihe ndị na-emepụta ihe ozugbo na igwe ma ọ bụ ntọala dị mfe maka ntinye epitaxial n'ihi ihe dị iche iche dị ka ikuku gas (n'ahịrị, kwụ ọtọ), okpomọkụ, nrụgide, nkwụsi ike, na mmetọ. Ya mere, a na-eji ihe ntanye na-etinye mkpụrụ n'elu, na-eme ka ntinye nke epitaxial na-eji teknụzụ CVD. Nke a susceptor bụSusceptor graphite nwere mkpuchi SiC.
Ihe mkpuchi graphite nwere mkpuchi SiC A na-ejikarị ya eme ihe na igwe-Organic Chemical Vapor Deposition (MOCVD) iji kwado na ikpo ọkụ otu kristal substrates. The thermal kwụsie ike na uniformity nke Ihe mkpuchi graphite nwere mkpuchi SiCdị oke mkpa maka uto nke ihe epitaxial, na-eme ka ha bụrụ akụkụ bụ isi nke akụrụngwa MOCVD (ụlọ ọrụ akụrụngwa MOCVD dị ka Veeco na Aixtron). Ugbu a, a na-eji teknụzụ MOCVD eme ihe na uto epitaxial nke ihe nkiri GaN maka LEDs na-acha anụnụ anụnụ n'ihi ịdị mfe ya, ọnụego uto na-achịkwa, na ịdị ọcha dị elu. Dị ka akụkụ dị mkpa nke MOCVD reactor, ndịsusceptor maka GaN film epitaxial utoga-enwerịrị nguzogide okpomoku dị elu, conductivity thermal conductivity, nkwụsi ike kemịkalụ, yana nkwụsi ike ọkụ ọkụ. Graphite na-emezu ihe ndị a chọrọ nke ọma.
Dị ka akụkụ bụ isi nke akụrụngwa MOCVD, onye na-ahụ maka graphite na-akwado ma na-ekpo ọkụ otu-kristal substrates, na-emetụta kpọmkwem otu na ịdị ọcha nke ihe nkiri. Ogo ya na-emetụta kpọmkwem nkwadebe nke wafers epitaxial. Agbanyeghị, site na iji ojiji na ọnọdụ ọrụ dịgasị iche iche, ndị na-ahụ maka eserese graphite na-agwụ ngwa ngwa ma na-ewere ya dị ka ihe oriri.
MOCVD susceptorsmkpa inwe ụfọdụ njirimara mkpuchi iji mezuo ihe ndị a:
- -Ezi mkpuchi:Ihe mkpuchi ahụ ga-ekpuchi kpamkpam graphite susceptor na njupụta dị elu iji gbochie corrosion na gburugburu gas na-emebi emebi.
- -Elu njikọ ike:Ihe mkpuchi ahụ ga-ejikọta nke ọma na onye na-ahụ maka graphite, na-eguzogide ọtụtụ okpomọkụ dị elu na obere okpomọkụ na-enweghị ikepụ ya.
- -Chemical kwụsie ike:Ihe mkpuchi ahụ ga-abụ nke siri ike na kemịkalụ iji zere ọdịda na oke okpomọkụ na ikuku ikuku.
SiC, ya na nguzogide corrosion ya, nrụpụta ọkụ dị elu, nkwụsi ike na-ekpo ọkụ, na nkwụsi ike kemịkalụ dị elu, na-arụ ọrụ nke ọma na gburugburu GaN epitaxial. Na mgbakwunye, ọnụọgụ mgbasawanye thermal nke SiC yiri graphite, na-eme SiC ihe kacha amasị maka mkpuchi graphite susceptor.
Ugbu a, ụdị SiC nkịtị gụnyere 3C, 4H, na 6H, nke ọ bụla dabara maka ngwa dị iche iche. Dịka ọmụmaatụ, 4H-SiC nwere ike ịmepụta ngwaọrụ dị elu, 6H-SiC kwụsiri ike ma jiri ya mee ihe maka ngwaọrụ optoelectronic, ebe 3C-SiC dị na nhazi ya na GaN, na-eme ka ọ dị mma maka mmepụta oyi akwa GaN na ngwaọrụ SiC-GaN RF. 3C-SiC, nke a makwaara dị ka β-SiC, na-ejikarị eme ihe dị ka ihe nkiri na ihe mkpuchi, na-eme ka ọ bụrụ ihe bụ isi maka mkpuchi.
Enwere ụzọ dị iche iche iji kwadebeIhe mkpuchi SiC, gụnyere sol-gel, ntinye, brushing, plasma spraying, chemical vapor reaction (CVR), na chemical vepor deposition (CVD).
N'ime ndị a, usoro ntinye bụ usoro ikpo ọkụ siri ike na-ekpo ọkụ. Site n'itinye mkpụrụ graphite n'ime ntụ ntụ nke nwere Si na C ntụ ntụ na sintering na gburugburu gas inert, mkpuchi SiC na-etolite na mkpụrụ graphite. Usoro a dị mfe, na mkpuchi na-ejikọta nke ọma na mkpụrụ. Otú ọ dị, mkpuchi ahụ enweghị nha nha ma nwee ike inwe pores, na-eduga na nkwụsị nke oxidation na-adịghị mma.
Ụzọ mkpuchi mkpuchi
Usoro ịgbasa ihe na-agụnye ịgbasa ngwa mmiri mmiri n'elu graphite substrate ma gwọọ ha n'otu okpomọkụ iji mepụta mkpuchi. Usoro a dị mfe ma dị ọnụ ala mana ọ na-eme ka njikọ na-adịghị ike dị n'etiti mkpuchi na mkpụrụ osisi, ihe mkpuchi na-adịghị mma, na mkpuchi dị nro na obere nkwụsị oxidation, na-achọ ụzọ enyemaka.
Usoro ịgbasa ion Beam
Ion beam spraying na-eji égbè ion beam fesa ihe gbazere ma ọ bụ akụkụ ụfọdụ gbazere n'elu graphite mkpụrụ osisi, na-akpụ mkpuchi n'elu ike. Usoro a dị mfe ma na-emepụta akwa mkpuchi SiC. Otú ọ dị, ihe mkpuchi ndị ahụ dị mkpa nwere nkwụsị oxidation na-adịghị ike, nke a na-ejikarị eme ihe maka SiC composite coatings iji meziwanye mma.
Usoro Sol-Gel
Usoro sol-gel gụnyere ịkwadebe otu, ngwọta sol transperent, na-ekpuchi elu ala, na ịnweta mkpuchi mgbe ihicha na sintering. Usoro a dị mfe ma dị ọnụ ala mana ọ na-ebute mkpuchi na obere ujo ujo na-enwe ike ịgbawa, na-egbochi ngwa ya zuru oke.
Mmetụta Vapor Chemical (CVR)
CVR na-eji Si na SiO2 ntụ ntụ na oke okpomọkụ na-emepụta SiO vapor, nke na-emeghachi omume na mkpụrụ osisi carbon iji mepụta mkpuchi SiC. Ihe mkpuchi SiC na-esi na ya pụta jikọtara ya na mkpụrụ osisi ahụ, mana usoro a chọrọ okpomọkụ mmeghachi omume dị elu na ọnụ ahịa.
Ntụsa mmiri kemịkalụ (CVD)
CVD bụ usoro izizi maka ịkwado mkpuchi SiC. Ọ na-agụnye mmeghachi omume gas-n'elu ala graphite, ebe akụrụngwa na-enweta mmeghachi omume anụ ahụ na nke kemịkal, na-edobe dị ka mkpuchi SiC. CVD na-emepụta mkpuchi SiC nwere njikọ chiri anya nke na-eme ka oxidation nke mkpụrụ osisi na nguzogide ablation dị elu. Otú ọ dị, CVD nwere ogologo oge nkwụnye ego ma nwee ike ịgụnye gas na-egbu egbu.
Ọnọdụ ahịa
N'ahịa susceptor graphite nwere mkpuchi SiC, ndị na-emepụta mba ofesi nwere nnukwu ụzọ na oke ahịa ahịa. Semicera emeriela teknụzụ ndị bụ isi maka uto mkpuchi mkpuchi SiC edo na mkpụrụ graphite, na-enye ihe ngwọta na-eleba anya na conductivity thermal, elastic modules, stiifness, lattice ntụpọ, na àgwà ndị ọzọ, na-emezu ihe MOCVD chọrọ ngwa ngwa.
Outlook n'ọdịnihu
Ụlọ ọrụ semiconductor nke China na-etolite ngwa ngwa, na-abawanye ngwa ngwa nke MOCVD epitaxial akụrụngwa na ịgbasa ngwa. A na-atụ anya na ahịa susceptor graphite mkpuchi SiC ga-eto ngwa ngwa.
Mmechi
Dị ka akụkụ dị oke mkpa na akụrụngwa semiconductor, ịmara teknụzụ mmepụta isi yana imepụta ihe mkpuchi graphite nwere mkpuchi SiC dị mkpa n'ụzọ dị mkpa maka ụlọ ọrụ semiconductor China. Ogige susceptor graphite mkpuchi SiC na-eme nke ọma, yana ịdị mma ngwaahịa ruru ọkwa mba ụwa.Semicerana-agbalịsi ike ịbụ onye na-ebute ụzọ n'ahịa a.
Oge nzipu: Jul-17-2024