Ntinye ion bụ usoro ịgbakwụnye ụfọdụ ego na ụdị adịghị ọcha n'ime ihe semiconductor iji gbanwee akụrụngwa eletrik ha. Enwere ike ịchịkwa ọnụọgụ na nkesa nke adịghị ọcha.
Akụkụ 1
Kedu ihe kpatara eji usoro ntinye ion
Na imepụta ngwaọrụ semiconductor ike, mpaghara P / N doping nke ọdịnalasilicon waferenwere ike nweta ya site na mgbasa. Otú ọ dị, mgbasa mgbe nile nke adịghị ọcha atọm nasilicon carbidedị oke ala, ya mere ọ bụ ihe ezi uche na-adịghị na ya iji nweta doping nhọrọ site na usoro mgbasa ozi, dị ka e gosiri na Figure 1. N'aka nke ọzọ, ọnọdụ okpomọkụ nke ntinye ion dị ala karịa usoro mgbasa ozi, na nkesa doping na-agbanwe agbanwe na nke ziri ezi nwere ike. a ga-akpụ.
Ọgụgụ 1 Ntụle nke mgbasa ozi na teknụzụ doping ion n'ime ihe silicon carbide
Akụkụ 2
Otu esi enwetasilicon carbidentinye ion
Ngwa ngwa ntinye ike ion dị elu nke ejiri na usoro nrụpụta silicon carbide bụ isi ihe mejupụtara ion, plasma, ihe ndị na-achọsi ike, magnet nyocha, ion beams, tubes osooso, ụlọ usoro, na diski nyocha, dị ka egosiri na eserese 2.
Onyonyo 2 Eserese eserese nke silicon carbide akụrụngwa ntinye ike dị elu
(Isi mmalite: "Semiconductor Manufacturing Technology")
A na-emekarị ntinye nke SiC ion na okpomọkụ dị elu, nke nwere ike ibelata mmebi nke lattice kristal kpatara site na bọmbụ ion. Maka4H-SiC wafers, A na-enwetakarị mmepụta nke mpaghara N-ụdị site na ịkụnye nitrogen na phosphorus ion, na mmepụta nkeỤdị PA na-enwetakarị ebe site n'itinye ion aluminum na boron ion.
Tebụl 1. Ihe atụ nke doping ahọpụtara na nrụpụta ngwaọrụ SiC
(Isi mmalite: Kimoto, Cooper, Fundamentals of Silicon Carbide Technology: Uto, Characterization, Devices, and Applications)
Ọgụgụ 3 Ntụle nke ntinye ion ume ọtụtụ nzọụkwụ na nkesa itinye uche doping elu
(Isi mmalite: G.Lulli, Okwu Mmalite nke Ion Implantation)
Iji nweta mkpokọta doping edo edo na mpaghara ntinye ion, ndị injinia na-ejikarị ntinye ion dị iche iche eme ihe iji dozie mkpokọta ịta ahụhụ nke mpaghara ntinye (dị ka egosiri na eserese 3); n'ime usoro mmepụta ihe n'ezie, site n'ịgbanwe ike ntinye na ntinye nke ntinye nke ion ion, enwere ike ịchịkwa ntinye doping na doping omimi nke ebe a na-etinye ion, dị ka egosiri na Figure 4. (a) na (b); ion implanter na-arụ otu ion implantation n'elu wafer site scanning n'elu wafer ọtụtụ ugboro n'oge ọrụ, dị ka e gosiri na Figure 4. (c).
(c) Ntugharị mmegharị nke ion implanter n'oge ntinye ion
Ọnụọgụ 4 N'oge usoro ntinye nke ion, a na-achịkwa ntinye adịghị ọcha na ịdị omimi site n'ịgbanwe ike ntinye ion na dose.
III
Usoro mgbanyụ ọkụ maka ntinye silicon carbide ion
Nleba anya, mpaghara nkesa, ọnụọgụ ọrụ, ntụpọ dị n'ime ahụ na n'elu ion ion bụ ihe ndị bụ isi nke usoro ntinye ion. Enwere ọtụtụ ihe na-emetụta nsonaazụ nke paramita ndị a, gụnyere ntinye ntinye, ike, nghazi kristal nke ihe onwunwe, ọnọdụ okpomọkụ, okpomọkụ na-ekpo ọkụ, oge nkwụsịtụ, gburugburu ebe obibi, wdg. N'adịghị ka silicon ion implantation doping, ọ ka na-esiri ike ịmecha ionize kpamkpam. adịghị ọcha nke silicon carbide mgbe etinyere ion doping. Inweta ọnụego ionization nke aluminom na mpaghara na-anọpụ iche nke 4H-SiC dị ka ọmụmaatụ, na ntinye doping nke 1 × 1017cm-3, ọnụego ionization nke nnabata bụ naanị ihe dị ka 15% n'ime ụlọ okpomọkụ (na-abụkarị ọnụego ionization nke silicon bụ ihe dịka. 100%). Iji nweta ihe mgbaru ọsọ nke ọnụ ọgụgụ dị elu na-arụ ọrụ na obere ntụpọ, a ga-eji usoro nkwụsị nke okpomọkụ dị elu mgbe a na-etinye ion iji mee ka ọkpụkpụ amorphous na-emepụta n'oge a na-etinye ya, nke mere na atom ndị ahụ etinyere na-abanye na saịtị ngbanwe ma rụọ ọrụ, dị ka egosiri. na eserese 5. Ka ọ dị ugbu a, nghọta ndị mmadụ banyere usoro nke usoro nkwụsịtụ ka dị oke. Njikwa na nghọta miri emi nke usoro nkwụsịtụ bụ otu n'ime nyocha nyocha nke ntinye ion n'ọdịnihu.
Ọgụgụ 5 Eserese atụmatụ nke nhazi atomic na-agbanwe n'elu ebe a na-etinye silicon carbide ion tupu na mgbe ọ gachara ion implantation annealing, ebe V.sina-anọchite anya ohere silicon, VCna-anọchite anya ohere ikuku carbon, Cina-anọchi anya atom na-ejuputa carbon, yana Siina-anọchite anya atọm na-ejuputa silicon
Ion activation annealing n'ozuzu na-agụnye ikpo ọkụ ọkụ, mgbakasị ngwa ngwa na ntanye laser. N'ihi sublimation nke Si atọm na SiC ihe, annealing okpomọkụ n'ozuzu adịghị gafere 1800 ℃; A na-emekarị ikuku na-ekpo ọkụ na gas na-adịghị agwụ agwụ ma ọ bụ oghere. Ion dị iche iche na-ebute ebe ntụpọ dị iche iche na SiC ma chọọ ọnọdụ okpomọkụ dị iche iche. Site n'ọtụtụ nsonaazụ nnwale, enwere ike kwubie na ka elu na-ekpo ọkụ na-ekpo ọkụ, na-eme ka ọnụọgụ ọrụ dị elu (dị ka egosiri na foto 6).
Ọnụọgụ 6 Mmetụta nke ikpo ọkụ ọkụ na ọkụ eletrik nke ntinye nitrogen ma ọ bụ ntinye phosphorus na SiC (n'ime ụlọ okpomọkụ)
(Ngụkọta dose ntinye 1 × 1014cm-2)
(Isi mmalite: Kimoto, Cooper, Fundamentals of Silicon Carbide Technology: Uto, Characterization, Devices, and Applications)
A na-eme usoro mgbaka ọkụ nke a na-ejikarị eme ihe mgbe etinyere SiC ion n'ime ikuku Ar na 1600 ℃ ~ 1700 ℃ iji megharia elu SiC ma mee ka dopant rụọ ọrụ, si otú a na-emeziwanye conductivity nke mpaghara doped; tupu annealing, a oyi akwa nke carbon film nwere ike mkpuchi n'elu wafer n'elu maka nchebe elu iji belata n'elu mmebi kpatara Si desorption na n'elu atomic Mbugharị, dị ka e gosiri na Figure 7; mgbe annealing, carbon film nwere ike wepụ oxidation ma ọ bụ corrosion.
Ọnụọgụ 7 Ntụle nke ịdị nro nke elu nke 4H-SiC wafers nwere ma ọ bụ na-enweghị nchebe ihe nkiri carbon n'okpuru 1800 ℃ okpomọkụ na-ekpo ọkụ.
(Isi mmalite: Kimoto, Cooper, Fundamentals of Silicon Carbide Technology: Uto, Characterization, Devices, and Applications)
IV
Mmetụta nke ntinye nke SiC ion na usoro mgbakasị ahụ
Ịtinye ion na ntinye ọrụ nke na-esote ga-emepụta ntụpọ na-ebelata arụmọrụ ngwaọrụ: ntụpọ ntụpọ mgbagwoju anya, mmejọ stacking (dị ka egosiri na foto 8), nkwụsị ọhụrụ, ntụpọ ike na-emighị emi ma ọ bụ nke miri emi, mgbakasị ụgbọ elu basal na mmegharị nke nkwụsị dị ugbu a. Ebe ọ bụ na usoro bombu ion dị elu ga-eme ka nrụgide dị na SiC wafer, usoro ntinye ọkụ na ike dị elu ga-eme ka ọkpụkpụ wafer dị elu. Nsogbu ndị a aghọwokwa ntụzịaka nke chọrọ ngwa ngwa ka emeziwanye ma mụọ na usoro mmepụta nke ntinye na ntinye nke SiC ion.
Onyonyo 8 Eserese atụmatụ nke ntụnyere n'etiti nhazi lattice 4H-SiC nkịtị yana mmejọ mkpokọ dị iche iche.
(Isi mmalite: Nicolὸ Piluso 4H-SiC ntụpọ)
V.
Mmelite usoro ntinye nke silicon carbide ion
(1) A na-edobe ihe nkiri oxide dị mkpa n'elu ebe a na-etinye ion iji belata ogo mmebi nke ihe ọkụkụ na-eme ka ike ion dị elu na-eme n'elu nke silicon carbide epitaxial Layer, dị ka e gosiri na Figure 9. (a) .
(2) Meziwanye ogo nke diski ebumnuche na akụrụngwa ntinye ion, nke mere na wafer na diski ebumnuche dabara nke ọma karị, conductivity thermal conductivity nke diski lekwasịrị anya na wafer ka mma, akụrụngwa na-ekpo ọkụ n'azụ wafer. ọzọ n'otu n'otu, na-eme ka mma nke elu-okpomọkụ na elu-ike ion implantation na silicon carbide wafers, dị ka e gosiri na Figure 9. (b).
(3) Mee ka ọnụ ọgụgụ ịrị elu okpomọkụ dị elu na ịdị n'otu okpomọkụ n'oge arụ ọrụ nke ngwa na-ekpo ọkụ na-ekpo ọkụ.
Ọgụgụ 9 Ụzọ maka imeziwanye usoro ntinye ion
Oge nzipu: Ọktoba 22-2024