Uto Epitaxial bụ teknụzụ na-eto otu oyi akwa kristal n'otu mkpụrụ kristal (mkpụrụ mmiri) nwere otu nghazi kristal dị ka mkpụrụ, dị ka a ga-asị na kristal mbụ gbatịpụrụ apụta.Nke a ọhụrụ toro otu crystal oyi akwa nwere ike dị iche iche na mkpụrụ n'usoro nke conductivity ụdị, resistivity, wdg, na ike tolite multi-layer otu kristal na dị iche iche ọkpụrụkpụ na dị iche iche chọrọ, si otú a ukwuu imeziwanye mgbanwe nke ngwaọrụ imewe na ngwaọrụ arụmọrụ.Na mgbakwunye, a na-ejikwa usoro epitaxial eme ihe n'ọtụtụ ebe na teknụzụ nkwụsị PN na sekit agbakwunyere na imeziwanye ihe onwunwe na sekit agbakwunyere nnukwu.
Nkewa nke epitaxy na-adabere n'ụdị kemịkalụ dị iche iche nke mkpụrụ na epitaxial oyi akwa na ụzọ dị iche iche uto.
Dabere na ihe mejupụtara kemịkalụ dị iche iche, uto epitaxial nwere ike kewaa ụzọ abụọ:
1. Homoepitaxial: N'okwu a, oyi akwa epitaxial nwere otu ihe mejupụtara kemịkalụ dị ka mkpụrụ.Dị ka ọmụmaatụ, silicon epitaxial layers na-etolite ozugbo na mkpụrụ silicon.
2. Heteroepitaxy: N'ebe a, ihe mejupụtara kemịkalụ nke oyi akwa epitaxial dị iche na nke mkpụrụ.Dịka ọmụmaatụ, a na-akụ akwa gallium nitride epitaxial n'elu mkpụrụ osisi sapphire.
Dabere na usoro uto dị iche iche, teknụzụ uto epitaxial nwekwara ike kewaa n'ụdị dị iche iche:
1. Molecular beam epitaxy (MBE): Nke a bụ nkà na ụzụ maka itolite otu ihe nkiri kristal dị mkpa na otu mkpụrụ kristal, nke a na-enweta site n'ịchịkwa ọnụ ahịa ọkụ ọkụ molecular na njupụta njupụta na oghere dị elu.
2. Metal-organic chemical vapor deposition (MOCVD): Nke a na nkà na ụzụ na-eji metal-organic ogige na gas-phase reagents na-eme chemical mmeghachi omume na elu okpomọkụ na-n'ịwa chọrọ mkpa film ihe.Ọ nwere nnukwu ngwa na nkwadebe nke compound semiconductor ihe na ngwaọrụ.
3. Liquid phase epitaxy (LPE): Site n'ịgbakwụnye ihe mmiri mmiri na otu mkpụrụ kristal ma na-eme ọgwụgwọ okpomọkụ na ụfọdụ okpomọkụ, mmiri mmiri na-eme ka ọ bụrụ otu ihe nkiri kristal.Ihe nkiri ndị a na-akwadebe site na nkà na ụzụ a bụ lattice-dakọtara na mkpụrụ ma na-ejikarị akwadebe ihe na ngwaọrụ semiconductor mejupụtara.
4. Vapor frasi epitaxy (VPE): Utilizes gaseous reactants ime chemical Jeremaya mere na elu okpomọkụ n'ịwa chọrọ mkpa film ihe.Teknụzụ a dabara adaba maka ịkwadebe nnukwu mpaghara, ihe nkiri kristal dị elu dị elu, ma bụrụkwa ihe pụrụ iche na nkwadebe nke ihe na ngwaọrụ semiconductor.
5. Chemical beam epitaxy (CBE): Teknụzụ a na-eji kemịkalụ kemịkalụ na-eto otu ihe nkiri kristal na otu mkpụrụ kristal, nke a na-enweta site na ịchịkwa oke ọkụ ọkụ kemịkalụ na njupụta beam.Ọ nwere nnukwu ngwa na nkwadebe nke elu-edu otu kristal mkpa fim.
6. Atomic Layer epitaxy (ALE): Iji atomic Layer deposition technology, achọrọ ihe nkiri ihe nkiri dị mkpa na-edobe oyi akwa site na oyi akwa na otu mkpụrụ kristal.Nkà na ụzụ a nwere ike ịkwadebe nnukwu mpaghara, ihe nkiri kristal dị elu ma na-ejikarị akwadebe ihe na ngwaọrụ semiconductor.
7. Epitaxy na-ekpo ọkụ (HWE): Site na ikpo ọkụ dị elu, a na-edobe reactant gas na otu mkpụrụ kristal iji mepụta otu ihe nkiri kristal.Nkà na ụzụ a dịkwa mma maka ịkwadebe nnukwu mpaghara, ihe nkiri kristal dị elu dị elu, a na-ejikwa ya karịsịa na nkwadebe nke ihe na ngwaọrụ semiconductor.
Oge nzipu: Mee-06-2024