Silicon Carbide CVD dị ọcha

CVD nnukwu Silicon Carbide (SiC)

 

Nchịkọta:CVDnnukwu silicon carbide (SiC)bụ ihe a na-achọsi ike na akụrụngwa etching plasma, ngwa nhazi ngwa ngwa (RTP), yana usoro nrụpụta semiconductor ndị ọzọ. Ngwongwo ya pụrụiche n'ibu, kemịkalụ, na thermal na-eme ka ọ bụrụ ihe dị mma maka ngwa teknụzụ dị elu nke na-achọ ịdị ogologo na ogologo oge.

Ngwa nke CVD Bulk SiC:Nnukwu SiC dị oke mkpa na ụlọ ọrụ semiconductor, ọkachasị na sistemu etching plasma, ebe ihe ndị dị ka mgbanaka mgbanaka, ihe mkpuchi gas, mgbanaka ihu, na platens na-erite uru site na nguzogide corrosion pụtara ìhè nke SiC na nrụpụta ọkụ. Ojiji ya na-agbatị ruoRTPsistemu n'ihi ikike SiC iguzogide mgbanwe okpomọkụ ngwa ngwa na-enweghị mmebi dị ukwuu.

Na mgbakwunye na akụrụngwa etching, CVDnnukwu SiCa na-amasị ya na ọkụ mgbasa na usoro uto kristal, ebe a chọrọ nkwụsi ike dị elu na iguzogide gburugburu kemịkalụ siri ike. Àgwà ndị a na-eme ka SiC bụrụ ihe a na-ahọrọ maka ngwa ndị dị elu na-agụnye okpomọkụ dị elu na gas na-emerụ emerụ, dị ka ndị nwere chlorine na fluorine.

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Uru nke akụrụngwa SiC nke CVD buru ibu:

Njupụta dị elu:Njupụta nke 3.2 g/cm³,CVD nnukwu SiCcomponents bụ nke ukwuu na-eguzogide iyi na n'ibu mmetụta.

Nrụpụta ọkụ kachasị elu:Inye conductivity thermal nke 300 W / m·K, nnukwu SiC na-ejikwa ọkụ na-arụ ọrụ nke ọma, na-eme ka ọ dị mma maka ihe ndị ekpughere na okirikiri okpomọkụ.

Nguzogide kemịkalụ pụrụiche:Mmeghachi omume dị ala nke SiC nwere gas na-etching, gụnyere chlorine na kemịkalụ dabere na fluorine, na-eme ka ndụ akụrụngwa dị ogologo.

Nkwụghachi ngbanwe: CVD nnukwu SiCEnwere ike ịhazi resistivity n'ime oke nke 10⁻²-10⁴ Ω-cm, na-eme ka ọ kwekọọ na mkpa etching na ihe nrụpụta semiconductor.

Ọnụọgụ Mgbasawanye okpomọkụ:Site na ọnụọgụ mgbasawanye thermal nke 4.8 x 10⁻⁶/°C (25–1000°C), CVD nnukwu SiC na-eguzogide ujo ọkụ, na-ejigide nkwụsi ike nke akụkụ ọbụlagodi n'oge usoro kpo oku na oyi.

Ogologo oge na Plasma:Ikpughe na plasma na gas na-emeghachi omume bụ ihe a na-apụghị izere ezere na usoro semiconductor, manaCVD nnukwu SiCna-enye nguzogide dị elu na corrosion na nbibi, na-ebelata ugboro ole nnọchi na ọnụ ahịa mmezi n'ozuzu ya.

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Nkọwa nka nka:

Dayameta:Ihe karịrị 305 mm

Nguzogide:Agbanwe n'ime 10⁻²-10⁴ Ω-cm

Njupụta:3.2 g/cm³

Nrụpụta okpomọkụ:300 W/m·K

Ọnụọgụ Mgbasawanye okpomọkụ:4.8 x 10⁻⁶/°C (25–1000°C)

 

Nhazi na mgbanwe:NaSemicera Semiconductor, anyị ghọtara na ngwa semiconductor ọ bụla nwere ike ịchọ nkọwa dị iche iche. Ọ bụ ya kpatara na akụrụngwa SiC nke CVD anyị nwere ike ịhazi ya nke ọma, yana nguzogide ike na-agbanwe agbanwe yana nha ahaziri iji kwado mkpa akụrụngwa gị. Ma ị na-ebuli sistemu etching plasma gị ma ọ bụ na-achọ ihe ndị na-adịgide adịgide na RTP ma ọ bụ usoro mgbasa, CVD nnukwu SiC anyị na-enye arụmọrụ enweghị atụ.

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