Silicon Carbide mkpuchi Barrel Susceptor maka Wafer Epitaxial

Nkọwa dị mkpirikpi:

Semicera na-enye ọtụtụ ihe susceptors na ihe graphite emebere maka ndị na-emegharị epitaxy dị iche iche.

Site na mmekorita atụmatụ ya na OEM ndị na-eduzi ụlọ ọrụ, ọkachamara ihe dị ukwuu, yana ike nrụpụta dị elu, Semicera na-ebupụta atụmatụ ahaziri iji mezuo ihe achọrọ ngwa gị. Nkwenye anyị maka ịdị mma na-eme ka ị nweta azịza kachasị mma maka mkpa reactor epitaxy gị.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Ụlọ ọrụ anyị na-enyemkpuchi SiCusoro ọrụ n'elu graphite, ceramics na ihe ndị ọzọ site CVD usoro, nke mere na pụrụ iche gas nwere carbon na silicon nwere ike meghachi omume na elu okpomọkụ iji nweta elu-ọcha Sic ụmụ irighiri, nke nwere ike na-edebe n'elu nke mkpuchi ihe na-etolite a.oyi akwa mkpuchi SiCmaka epitaxy barel ụdị hy pnotic.

Isi atụmatụ:

1 .High ịdị ọcha SiC mkpuchi graphite

2. Nguzogide okpomọkụ kachasị elu & thermal uniformity

3. Ọ dị mmaSiC crystal kpuchiemaka elu dị larịị

4. Nnukwu ogologo oge megide ihicha kemịkalụ

SiC mkpuchi Barrel Susceptor maka Wafer Epitaxial

Isi nkọwa nkemkpuchi CVD-SIC

Njirimara SiC-CVD
Ọdịdị kristal	FCC β oge
Njupụta	g/cm ³	3.21
Isi ike	Vickers isi ike	2500
Nha ọka	μm	2 ~ 10
Ịdị ọcha kemịkalụ	%	99,99995
Ike ikpo ọkụ	J·kg-1 · K-1	640
Sublimation okpomọkụ	℃	2700
Ike Felexural	MPa (RT 4-isi)	415
Modul nke Young	GPA (4pt gbagọọ, 1300 ℃)	430
Mgbasawanye okpomọkụ (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300