Semiconductor MOCVD ihe na-ekpo ọkụ, ihe ọkụ ọkụ MOCVD

Nkọwa dị mkpirikpi:

Igwe kpo oku ọhụrụ nwere arụ ọrụ igwe niile na-enwe ike igbochi nrụrụ na oke okpomọkụ. Nke a na-eme ka ha nwee ọtụtụ uru na-eji, dị ka: highrepeatability, elu uniformity, elu ntụkwasị obi na highcompatibility.


Nkọwa ngwaahịa

Mkpado ngwaahịa

Nkọwa

MOCVD Substrate Heater, Ihe Ndị Na-ekpo ọkụ Maka MOCVD
Igwe ọkụ eserese:
A na-eji ihe ndị na-ekpo ọkụ graphite na-ekpo ọkụ na ọkụ ọkụ dị elu na okpomọkụ ruru ogo 2200 na ebe oghere na 3000 degrees na deoxidized na ntinye gas gburugburu.

MOCVD-Substrate-Heater-Heat-Enye-Maka-MOCVD2-300x300

MOCVD-Substrate-Heater-Heat-Ngwa-Maka-MOCVD3-300x300

MOCVD-Substrate-Heater-Heat-Ngwa-Maka-MOCVD-300x300

Isi atụmatụ nke ikpo ọkụ graphite

1. uniformity nke kpo oku Ọdịdị.
2. ezigbo ọkụ eletrik na ibu eletrik dị elu.
3. nguzogide corrosion.
4. inoxidizability.
5. elu chemical ịdị ọcha.
6. ike n'ibu ike.
Ihe bara uru bụ ike ịrụ ọrụ nke ọma, uru dị elu na mmezi dị ala.
Anyị nwere ike ịmepụta mgbochi-oxidation na ogologo ndụ ogologo oge graphite crucible, graphite ebu na akụkụ niile nke ikpo ọkụ graphite.

Ihe eserese kemịkalụ

Uru: Nnukwu nguzogide okpomọkụ
Ngwa: MOCVD/Ọkụ Vacuum/ Mpaghara Na-ekpo ọkụ
Nnukwu njupụta: 1.68-1.91g/cm3
Ike mgbanwe: 30-46Mpa
Nguzogide: 7-12μΩm

Isi ihe nke ikpo ọkụ graphite

Nkọwa nka nka VET-M3
Njupụta buru ibu (g/cm3) ≥1.85
Ọdịnaya Ash (PPM) ≤500
Oke ike ike ≥45
Nguzogide akọwapụtara (μ.Ω.m) ≤12
Ike Flexural (Mpa) ≥40
Ike mkpakọ (Mpa) ≥70
Oke. Nha ọka (μm) ≤43
Ọnụọgụ nke Mgbasa ọkụ Mm/°C ≤4.4*10-6

Igwe ọkụ graphite maka ọkụ ọkụ eletrik nwere njirimara nke nguzogide okpomọkụ, nguzogide oxidation, ezigbo eletriki eletrik na ike nrụpụta ka mma. Anyị nwere ike igwe dị iche iche nke graphite kpo oku dị ka ndị ahịa si chepụta.

Nkọwapụta Ụlọ ọrụ

gbasara (3)
WeiTai Energy Technology Co., Ltd bụ onye na-ebute ụzọ nke seramiki semiconductor dị elu yana naanị onye nrụpụta na China nke nwere ike n'otu oge na-enye seramiiki silicon carbide dị ọcha (karịsịa Recrystallized SiC) na mkpuchi CVD SiC. Na mgbakwunye, ụlọ ọrụ anyị na-agba mbọ maka ubi seramiiki dị ka alumina, aluminum nitride, zirconia, na silicon nitride, wdg.

Isi ngwaahịa anyị gụnyere: silicon carbide etching disc, silicon carbide boat tow, silicon carbide wafer ụgbọ mmiri (Photovoltaic&Semiconductor), silicon carbide furnace tube, silicon carbide cantilever paddle, silicon carbide chucks, silicon carbide beam, yana mkpuchi CVD SiC na TaC mkpuchi. Ngwaahịa ndị a na-ejikarị na semiconductor na ụlọ ọrụ fotovoltaic, dị ka akụrụngwa maka uto kristal, epitaxy, etching, nkwakọ, mkpuchi na ọkụ mgbasa, wdg.

Ụlọ ọrụ anyị nwere ngwá ọrụ mmepụta ihe zuru oke dị ka ịkpụzi, sintering, nhazi, mkpuchi mkpuchi, wdg, nke nwere ike mezue njikọ niile dị mkpa nke mmepụta ngwaahịa ma nwee njikwa dị elu nke àgwà ngwaahịa; Enwere ike ịhọrọ atụmatụ mmepụta kachasị mma dị ka mkpa nke ngwaahịa ahụ si dị, na-eme ka ọnụ ahịa dị ala ma na-enye ndị ahịa ngwaahịa ndị ọzọ asọmpi; Anyị nwere ike na-agbanwe agbanwe na ịrụ ọrụ nke ọma ịhazi mmepụta nke dabere na ihe nnyefe chọrọ yana njikọ na usoro njikwa usoro ntanetị, na-enye ndị ahịa oge nnyefe ngwa ngwa na karịa.
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