Semiconductor Silicon dabeere na GaN epitaxy

Nkọwa dị mkpirikpi:

Semicera Energy Technology Co., Ltd bụ onye na-ebute ụzọ nke seramiki semiconductor dị elu yana naanị onye nrụpụta na China nke nwere ike n'otu oge na-enye seramiiki silicon carbide dị ọcha (karịsịa Recrystallized SiC) na mkpuchi CVD SiC. Na mgbakwunye, ụlọ ọrụ anyị na-agba mbọ maka ubi seramiiki dị ka alumina, aluminum nitride, zirconia, na silicon nitride, wdg.

 

Nkọwa ngwaahịa

Mkpado ngwaahịa

GaN epitaxy dabere na silicon

Nkọwa ngwaahịa

Ụlọ ọrụ anyị na-enye ọrụ usoro mkpuchi SiC site na usoro CVD n'elu graphite, ceramics na ihe ndị ọzọ, nke mere na gas pụrụ iche nwere carbon na silicon na-emeghachi omume na okpomọkụ dị elu iji nweta mkpụrụ ndụ SiC dị ọcha, ụmụ irighiri ihe ndị a na-edebe n'elu ihe ndị a na-ekpuchi, na-akpụ oyi akwa mkpuchi SIC.

Isi atụmatụ:

1. Nguzogide oxidation dị elu:

Nguzogide oxidation ka dị ezigbo mma mgbe okpomọkụ dị elu dị ka 1600 C.

2. Nnukwu ịdị ọcha: nke a na-eme site na ntinye ikuku kemịkalụ n'okpuru ọnọdụ chlorination dị elu.

3. Nguzogide nbibi: elu ike, kọmpat elu, ezigbo ahụ.

4. Nguzogide corrosion: acid, alkali, nnu na organic reagents.

Nkọwa isi nke mkpuchi CVD-SIC

Njirimara SiC-CVD

Ọdịdị kristal

FCC β oge

Njupụta

g/cm ³

3.21

Isi ike

Vickers isi ike

2500

Nha ọka

μm

2 ~ 10

Ịdị ọcha kemịkalụ

%

99,99995

Ike ikpo ọkụ

J·kg-1 · K-1

640

Sublimation okpomọkụ

2700

Ike Felexural

MPa (RT 4-isi)

415

Modul nke Young

GPA (4pt gbagọọ, 1300 ℃)

430

Mgbasawanye okpomọkụ (CTE)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300

Ụlọ ọrụ Semicera
Ụlọ ọrụ Semicera 2
Igwe eji eme ihe
Nhazi CNN, nhicha kemịkalụ, mkpuchi CVD
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