Silicon Carbide Epitaxy

Nkọwa dị mkpirikpi:

Silicon Carbide Epitaxy- akwa epitaxial dị elu ahaziri maka ngwa semiconductor dị elu, na-enye arụmọrụ dị elu na ntụkwasị obi maka ngwa elektrọnik na ngwaọrụ optoelectronic.


Nkọwa ngwaahịa

Mkpado ngwaahịa

Ndị SemiceraSilicon Carbide Epitaxyemebere ya iji gboo mkpa siri ike nke ngwa semiconductor ọgbara ọhụrụ. Site n'iji usoro uto epitaxial dị elu, anyị na-ahụ na oyi akwa silicon carbide na-egosipụta àgwà kristal pụrụ iche, ịdị n'otu, na njupụta ntụpọ pere mpe. Àgwà ndị a dị oké mkpa maka ịmepụta ngwá electronic na-arụ ọrụ dị elu, ebe arụmọrụ na njikwa okpomọkụ dị oke mkpa.

NkeSilicon Carbide EpitaxyA na-ahazi usoro na Semicera iji mepụta akwa epitaxial nke nwere oke nha yana njikwa doping, na-ahụ na arụmọrụ na-agbanwe agbanwe n'ofe ngwaọrụ dị iche iche. Ọkwa nke a nkenke dị mkpa maka ngwa n'ime ụgbọ ala eletrik, sistemu ike mmeghari ohuru, na nkwukọrịta ugboro ugboro, ebe ntụkwasị obi na arụmọrụ dị oke mkpa.

Ọzọkwa, Semicera'sSilicon Carbide Epitaxyna-enye nkwalite ikuku ọkụ yana voltaji ndakpọ dị elu, na-eme ka ọ bụrụ nhọrọ kacha amasị maka ngwaọrụ ndị na-arụ ọrụ n'okpuru oke ọnọdụ. Ngwongwo ndị a na-enye aka na ndụ ngwaọrụ dị ogologo ma melite arụmọrụ sistemu zuru oke, ọkachasị na gburugburu ike dị elu na oke okpomọkụ.

Semicera na-enyekwa nhọrọ nhazi makaSilicon Carbide Epitaxy, na-enye ohere maka ngwọta ahaziri nke na-egbo mkpa ngwaọrụ. Ma maka nyocha ma ọ bụ mmepụta buru ibu, a na-emepụta akwa epitaxial anyị iji kwado ọgbọ na-esote nke semiconductor innovations, na-eme ka mmepe nke ngwa eletrik dị ike, dị irè na nke a pụrụ ịdabere na ya.

Site na ijikọ teknụzụ ọnụ na usoro njikwa mma siri ike, Semicera na-ahụ na anyịSilicon Carbide Epitaxyngwaahịa ọ bụghị naanị na-ezute mana gafere ụkpụrụ ụlọ ọrụ. Nkwenye a maka ịdị mma na-eme ka akwa epitaxial anyị bụrụ ezigbo ntọala maka ngwa semiconductor dị elu, na-emeghe ụzọ maka ọganiihu na ngwa eletrọnịkị na optoelectronics.

Ihe

Mmepụta

Nnyocha

Dummy

kristal Parameters

Ụdị poly

4H

Njehie nhazi ihu elu

<11-20>4±0.15°

Igwe ọkụ eletrik

Dopant

n-ụdị Nitrogen

Nguzogide

0.015-0.025ohm·cm

Mechanical Parameters

Dayameta

150.0± 0.2mm

Ọkpụrụkpụ

350± 25 μm

Ntuzi aka dị larịị

[1-100]±5°

Ogologo larịị nke isi

47.5 ± 1.5mm

Ụlọ nke abụọ

Ọ dịghị

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Ụta

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Ihu (Si-face) adịghị ike (AFM)

Ra≤0.2nm (5μm*5μm)

Nhazi

Njupụta Micropipe

<1 ea/cm2

<10 nkea/cm2

<15 ea/cm2

Igwe adịghị ọcha

≤5E10atom/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Ogo ihu

N'ihu

Si

Ngwucha elu

Si-ihu CMP

Ụmụ irighiri ihe

≤60ea/wafer (nha≥0.3μm)

NA

Ọkpụkpụ

≤5ea/mm. Ogologo ngụkọta ≤ Dayameta

Ogologo ngụkọta ≤2* dayameta

NA

Peel oroma / olulu / ntụpọ / striations / mgbawa / mmetọ

Ọ dịghị

NA

Iberibe ibe / indents / mgbaji / hex

Ọ dịghị

Mpaghara polytype

Ọ dịghị

Mpaghara mkpokọta≤20%

Mpaghara mkpokọta≤30%

Akara laser n'ihu

Ọ dịghị

Ogo azụ

Ngwucha azụ

C-ihu CMP

Ọkpụkpụ

≤5ea/mm, Mgbakọ ogologo≤2* dayameta

NA

Nrụrụ azụ (nkịta ihu/indents)

Ọ dịghị

Azụ isi ike

Ra≤0.2nm (5μm*5μm)

Akara laser azụ

1 mm (si n'akụkụ elu)

Ọnụ

Ọnụ

Chamfer

Nkwakọ ngwaahịa

Nkwakọ ngwaahịa

Epi dị njikere na nkwakọ ihe efu

Ngwunye cassette ọtụtụ wafer

* Ihe edeturu: "NA" pụtara enweghị arịrịọ Ihe anaghị ekwupụta nwere ike na-ezo aka na SEMI-STD.

tech_1_2_size
SiC wafers

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