Silicon carbide bụ ụdị carbide sịntetik nwere molekul SiC. Mgbe a na-enye ike, silica na carbon na-etolitekarị na okpomọkụ dị elu karịa 2000 ° C. Silicon carbide nwere njupụta usoro iwu nke 3.18g/cm3, ike Mohs na-esote diamond, yana microhardness nke 3300kg/mm3 n'etiti 9.2 na 9.8. N'ihi ike siri ike ya na akwa mkpuchi akwa, ọ nwere njirimara nke nguzogide okpomọkụ dị elu ma jiri ya mee ihe dị iche iche nke na-eguzogide ọgwụ, corrosion na-eguzogide na okpomọkụ dị elu. Ọ bụ ụdị teknụzụ seramiiki ọhụrụ nke na-agaghị eyi.
1. Chemical Njirimara.
(1) Nguzogide oxidation: Mgbe ihe silicon carbide na-ekpo ọkụ na 1300 Celsius C na ikuku, oyi akwa mkpuchi silicon dioxide na-amalite imepụta n'elu kristal silicon carbide kristal. Na ndim nke oyi akwa mkpuchi, ihe dị n'ime silicon carbide na-aga n'ihu na-eme ka ọ ghara ịdị na-eme ka ọ ghara ịdị na-eme ka ọ dị mma, nke mere na silicon carbide nwere ezigbo nkwụsị oxidation. Mgbe okpomọkụ ruru ihe karịrị 1900K (1627 Celsius C), ihe nkiri nchebe silicon dioxide na-amalite imebi, na oxidation nke silicon carbide na-esiwanye ike, ya mere 1900K bụ okpomọkụ na-arụ ọrụ nke silicon carbide na ikuku oxidizing.
(2) Acid na alkali nguzogide: n'ihi ọrụ nke ihe nkiri nchebe silicon dioxide, silicon carbide nwere ihe onwunwe na ọrụ nke ihe nkiri nchebe silicon dioxide.
2. Ahụ na n'ibu Njirimara.
(1) Njupụta: The urughuru njupụta nke dị iche iche silicon carbide kristal dị nnọọ nso, n'ozuzu na-ewere na-3.20g / mm3, na eke mbukota njupụta nke silicon carbide abrasives bụ n'etiti 1.2-1.6g / mm3, dabere na urughuru size, urughuru size mejupụtara na urughuru size udi.
(2) Ike: Mohs siri ike nke silicon carbide bụ 9.2, micro-density nke Wessler bụ 3000-3300kg / mm2, ike nke Knopp bụ 2670-2815kg / mm, abrasive dị elu karịa corundum, nso diamond, cubic boron nitride na boron carbide.
(3) Thermal conductivity: ngwaahịa silicon carbide nwere nnukwu okpomọkụ conductivity, obere okpomọkụ mgbasa ọnụ ọgụgụ, elu thermal ujo na-eguzogide, na elu-edu refractory ihe.
3. Eletriki Njirimara.
| Ihe | Nkeji | Data | Data | Data | Data | Data |
| RBsic (siic) | NBSiC | SSiC | RSiC | OsiC | ||
| Ọdịnaya SiC | % | 85 | 76 | 99 | ≥99 | ≥90 |
| Ọdịnaya silicon efu | % | 15 | 0 | 0 | 0 | 0 |
| Oke ọrụ okpomọkụ | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Njupụta | g/cm^3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Mepee porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Ike na-ehulata 20 ℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Ehulata ike 1200 ℃ | Mpa | 280 | 180 | 400 | 120 | / |
| Modul nke elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modul nke elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200 ℃ | W/mk | 45 | 19.6 | 100-120 | 36.6 | / |
| Ọnụọgụ nke thermalexpansion | K^-lx10^-8 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | kg/m^m2 | 2115 | / | 2800 | / | / |
