Silicon nitride jikọtara silicon carbide
Si3N4 bonded SiC seramiiki refractory ihe, na-agwakọta ya na elu dị ọcha SIC ezi ntụ ntụ na Silicon ntụ ntụ, mgbe slipping N'ezie, mmeghachi omume sintered n'okpuru 1400 ~ 1500 ° C.N'oge ọmụmụ ihe, na-ejuputa Nitrogen dị ọcha n'ime ọkụ, mgbe ahụ, silicon ga-emeghachi omume na Nitrogen wee mepụta Si3N4, Ya mere, Si3N4 bonded SiC material bụ silicon nitride (23%) na silicon carbide (75%) dị ka isi akụrụngwa. , ngwakọta na organic ihe, na kpụrụ site ngwakọta, extrusion ma ọ bụ wụsara, wee mee mgbe ihicha na nitrogenization.
Atụmatụ na uru:
1.High okpomọkụ ndidi
2.High thermal conductivity na ujo iguzogide
3.High n'ibu ike na abrasion mgbochi
4.Excellent ike arụmọrụ na corrosion iguzogide
Anyị na-enye ihe nrụpụta seramiiki NSiC dị elu na nke ziri ezi nke na-ahazi ya
1.Mfe nkedo
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing
Mpempe akwụkwọ data ihe
> Ngwakọta kemịkalụ | Sic | 75% |
Si3N4 | ≥23% | |
Free Si | 0% | |
Njupụta nnukwu (g/cm3) | 2.70~2.80 | |
Obere porosity pụtara (%) | 12~15 | |
Ehulata ike na 20 ℃ (MPa) | 180~190 | |
Ehulata ike na 1200 ℃ (MPa) | 207 | |
Ehulata ike na 1350 ℃ (MPa) | 210 | |
Ike mkpakọ na 20 ℃ (MPa) | 580 | |
Thermal conductivity na 1200 ℃ (w / mk) | 19.6 | |
Ọnụọgụ mgbasawanye okpomọkụ na 1200 ℃ (x 10-6/C) | 4.70 | |
Mgbochi ujo okpomọkụ | Magburu onwe | |
Oke.okpomọkụ (℃) | 1600 |