Silicon nitride jikọtara silicon carbide square beam

Nkọwa dị mkpirikpi:

Si3N4 bonded SiC dị ka ihe ọhụrụ ụdị refractory ihe, na-eji ọtụtụ ebe. The itinye okpomọkụ bụ 1400 C.It nwere mma thermal kwụsie ike, thermal ujo, nke dị mma karịa larịị refractory material.It nwekwara mgbochi mgbochi.-oxidation, elu corrosion na-eguzogide, eyi-eguzogide, elu na-ehulata ike.Ọ nwere ike iguzogide corrosion na scouring, ghara ịbụ ihe mmetọ na ngwa ngwa okpomọkụ conduction na gbazee metal dị ka AL, Pb, Zn, Cu ect.


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描述

Silicon nitride jikọtara silicon carbide

Si3N4 bonded SiC seramiiki refractory ihe, na-agwakọta ya na elu dị ọcha SIC ezi ntụ ntụ na Silicon ntụ ntụ, mgbe slipping N'ezie, mmeghachi omume sintered n'okpuru 1400 ~ 1500 ° C.N'oge ọmụmụ ihe, na-ejuputa Nitrogen dị ọcha n'ime ọkụ, mgbe ahụ, silicon ga-emeghachi omume na Nitrogen wee mepụta Si3N4, Ya mere, Si3N4 bonded SiC material bụ silicon nitride (23%) na silicon carbide (75%) dị ka isi akụrụngwa. , ngwakọta na organic ihe, na kpụrụ site ngwakọta, extrusion ma ọ bụ wụsara, wee mee mgbe ihicha na nitrogenization.

 

特点

Atụmatụ na uru:

1.High okpomọkụ ndidi
2.High thermal conductivity na ujo iguzogide
3.High n'ibu ike na abrasion mgbochi
4.Excellent ike arụmọrụ na corrosion iguzogide

Anyị na-enye ihe nrụpụta seramiiki NSiC dị elu na nke ziri ezi nke na-ahazi ya

1.Mfe nkedo
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing

Mpempe akwụkwọ data ihe

> Ngwakọta kemịkalụ Sic 75%
Si3N4 ≥23%
Free Si 0%
Njupụta nnukwu (g/cm3) 2.702.80
Obere porosity pụtara (%) 1215
Ehulata ike na 20 ℃ (MPa) 180190
Ehulata ike na 1200 ℃ (MPa) 207
Ehulata ike na 1350 ℃ (MPa) 210
Ike mkpakọ na 20 ℃ (MPa) 580
Thermal conductivity na 1200 ℃ (w / mk) 19.6
Ọnụọgụ mgbasawanye okpomọkụ na 1200 ℃ (x 10-6/C) 4.70
Mgbochi ujo okpomọkụ Magburu onwe
Oke.okpomọkụ (℃) 1600
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