Nkọwa
The Graphite Susceptor nwereMkpuchi Silicon Carbide, 6 iberibe6 inch wafer Carriersite na semicera na-enye ogologo ndụ pụrụ iche na conductivity thermal maka ngwa uto epitaxial na-arụ ọrụ dị elu. Semicera bụ ọkachamara na ndị na-eme ihe ike emebere iji kwalite usoro dịkaDị ka EpitaxynaSiC epitaxy, n'ịhụ na a pụrụ ịdabere na arụmọrụ na-achọ semiconductor gburugburu.
Emebere susceptor a ka ọ bụrụ nke ejiri yaMOCVD SusceptorSistemu ma na-enye ndakọrịta na ndị na-ebu dị iche iche dị ka PSS Etching Carrier, ICP Etching Carrier na RTP Carrier. Ọ dị mma maka mmepụta Silicon Monocrystalline na LED Epitaxial Susceptor setups, na-enye mgbanwe dị iche iche na nhazi dị iche iche, gụnyere Barrel Susceptor na Pancake Susceptor designs.
The Graphite Susceptor with Silicon Carbide Coating na-akwado ngwa na mpaghara ike anyanwụ site na ntinye ya na akụkụ fotovoltaic ma dị elu na GaN na usoro SiC Epitaxy. Igwe na-ebu ya 6-inch wafer na-eme ka ọ dị elu, na-eme ka ọ bụrụ ngwá ọrụ dị mkpa maka ndị na-emepụta ihe na semiconductor na fotovoltaic.
Isi atụmatụ
1 .High ịdị ọcha SiC mkpuchi graphite
2. Nguzogide okpomọkụ kachasị elu & thermal uniformity
3. Ọ dị mmaSiC crystal kpuchiemaka elu dị larịị
4. Nnukwu ogologo oge megide ihicha kemịkalụ
Nkọwa bụ isi nke mkpuchi CVD-SIC:
SiC-CVD | ||
Njupụta | (g/cc) | 3.21 |
Ike mgbanwe | (Mpa) | 470 |
Mgbasa ọkụ ọkụ | (10-6/K) | 4 |
Thermal conductivity | (W/mK) | 300 |
Mbukota na mbupu
Ikike inye:
10000 Iberibe/Iberibe kwa ọnwa
Nkwakọ ngwaahịa na nnyefe:
Mbukota: Standard & siri ike mbukota
Akpa Poly + Igbe + Katọn + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Etiti oge:
Ọnụọgụ(Iberibe) | 1-1000 | >1000 |
Est. Oge (ụbọchị) | 30 | A ga-enwe mkparịta ụka |