Nke anọ, Usoro mbufe uzuoku anụ ahụ
Ụzọ ụgbọ njem anụ ahụ (PVT) sitere na nkà na ụzụ nke vapor sublimation technology nke Lely chepụtara na 1955. A na-etinye ntụ ntụ SiC na tube graphite ma na-ekpo ọkụ na okpomọkụ dị elu iji decompose na sublimate SiC ntụ ntụ, na mgbe ahụ, graphite tube dị mma.Mgbe ire nke SiC ntụ ntụ gasịrị, a na-edobe akụkụ akụkụ vapor na kristal n'ime kristal SiC gburugburu tube graphite.Ọ bụ ezie na usoro a siri ike inweta nnukwu SiC otu kristal, na usoro ntinye ego na tube graphite siri ike ịchịkwa, ọ na-enye echiche maka ndị nchọpụta na-esote.
Ym Terairov et al.na Russia webatara echiche nke kristal mkpụrụ na ndabere a, wee dozie nsogbu nke ọdịdị kristal na-enweghị nchịkwa na ọnọdụ nucleation nke kristal SiC.Ndị nchọpụta sochirinụ gara n'ihu na-emeziwanye ma mechaa mepụta usoro njem ikuku nke anụ ahụ (PVT) na iji ụlọ ọrụ eme ihe taa.
Dị ka usoro uto kristal SiC mbụ, usoro mbufe ikuku anụ ahụ bụ usoro uto kachasị maka uto kristal SiC.E jiri ya tụnyere ụzọ ndị ọzọ, usoro ahụ nwere ihe ndị dị ala chọrọ maka akụrụngwa na-eto eto, usoro uto dị mfe, njikwa ike siri ike, mmepe nke ọma na nyocha, ma nweta ngwa ọrụ mmepụta ihe.E gosipụtara nhazi nke kristal toro site na usoro PVT bụ isi ugbu a na ọnụ ọgụgụ a.
Enwere ike ịchịkwa mpaghara axial na radial okpomọkụ site n'ịchịkwa ọnọdụ mkpuchi okpomọkụ nke mpụga nke graphite crucible.A na-etinye ntụ ntụ SiC na ala nke graphite crucible na okpomọkụ dị elu, na mkpụrụ kristal SiC na-edozi n'elu nke graphite crucible na obere okpomọkụ.A na-achịkwa ebe dị anya n'etiti ntụ ntụ na mkpụrụ ahụ ka ọ bụrụ iri puku kwuru iri milimita iji zere kọntaktị n'etiti otu kristal na-eto eto na ntụ ntụ.Okpomọkụ gradient na-adịkarị na nso 15-35 ℃ / cm.A na-edobe gas na-adịghị agwụ agwụ nke 50-5000 Pa n'ime ọkụ iji mụbaa convection.N'ụzọ dị otú a, mgbe SiC ntụ ntụ na-ekpo ọkụ na 2000-2500 ℃ site na induction kpo oku, SiC ntụ ntụ ga-adaba ma decompose n'ime Si, Si2C, SiC2 na ndị ọzọ vapo components, na-ebuga na njedebe mkpụrụ na convection gas, na A na-eme ka kristal SiC dị na kristal mkpụrụ iji nweta otu uto kristal.Ọnụego ya na-ahụkarị bụ 0.1-2mm / h.
Usoro PVT na-elekwasị anya na njikwa okpomọkụ nke okpomọkụ, gradient okpomọkụ, elu elu, oghere ihe dị elu na nrụgide ibu, uru ya bụ na usoro ya dịtụ tozuru okè, ihe ọkụkụ dị mfe ịmepụta, ọnụ ahịa dị ala, ma usoro mmepe nke ọganihu. PVT usoro siri ike ịhụ, kristal ibu ọnụego nke 0.2-0.4mm / h, o siri ike na-eto eto kristal na nnukwu ọkpụrụkpụ (> 50mm).Mgbe ọtụtụ iri afọ nke mgbalị na-aga n'ihu, ahịa dị ugbu a maka SiC substrate wafers toro site na usoro PVT abụrụla nke ukwuu, na mmepụta kwa afọ nke SiC substrate wafers nwere ike iru ọtụtụ narị puku wafers, na nha ya na-eji nwayọọ nwayọọ na-agbanwe site na 4 sentimita ruo 6 sentimita asatọ. , ma mepụtala inch asatọ nke ihe atụ mkpụrụ osisi SiC.
Nke ise,Usoro ntinye mmiri kemịkalụ dị elu
Nnukwu okpomọkụ kemịkalụ ikuku mmiri (HTCVD) bụ usoro emelitere nke dabere na Mkpokọta Vapor Chemical (CVD).Emebere usoro a na 1995 site na Kordina et al., Mahadum Linkoping, Sweden.
E gosipụtara eserese n'usoro ihe uto na foto a:
Enwere ike ịchịkwa mpaghara axial na radial okpomọkụ site n'ịchịkwa ọnọdụ mkpuchi okpomọkụ nke mpụga nke graphite crucible.A na-etinye ntụ ntụ SiC na ala nke graphite crucible na okpomọkụ dị elu, na mkpụrụ kristal SiC na-edozi n'elu nke graphite crucible na obere okpomọkụ.A na-achịkwa ebe dị anya n'etiti ntụ ntụ na mkpụrụ ahụ ka ọ bụrụ iri puku kwuru iri milimita iji zere kọntaktị n'etiti otu kristal na-eto eto na ntụ ntụ.Okpomọkụ gradient na-adịkarị na nso 15-35 ℃ / cm.A na-edobe gas na-adịghị agwụ agwụ nke 50-5000 Pa n'ime ọkụ iji mụbaa convection.N'ụzọ dị otú a, mgbe SiC ntụ ntụ na-ekpo ọkụ na 2000-2500 ℃ site na induction kpo oku, SiC ntụ ntụ ga-adaba ma decompose n'ime Si, Si2C, SiC2 na ndị ọzọ vapo components, na-ebuga na njedebe mkpụrụ na convection gas, na A na-eme ka kristal SiC dị na kristal mkpụrụ iji nweta otu uto kristal.Ọnụego ya na-ahụkarị bụ 0.1-2mm / h.
Usoro PVT na-elekwasị anya na njikwa okpomọkụ nke okpomọkụ, gradient okpomọkụ, elu elu, oghere ihe dị elu na nrụgide ibu, uru ya bụ na usoro ya dịtụ tozuru okè, ihe ọkụkụ dị mfe ịmepụta, ọnụ ahịa dị ala, ma usoro mmepe nke ọganihu. PVT usoro siri ike ịhụ, kristal ibu ọnụego nke 0.2-0.4mm / h, o siri ike na-eto eto kristal na nnukwu ọkpụrụkpụ (> 50mm).Mgbe ọtụtụ iri afọ nke mgbalị na-aga n'ihu, ahịa dị ugbu a maka SiC substrate wafers toro site na usoro PVT abụrụla nke ukwuu, na mmepụta kwa afọ nke SiC substrate wafers nwere ike iru ọtụtụ narị puku wafers, na nha ya na-eji nwayọọ nwayọọ na-agbanwe site na 4 sentimita ruo 6 sentimita asatọ. , ma mepụtala inch asatọ nke ihe atụ mkpụrụ osisi SiC.
Nke ise,Usoro ntinye mmiri kemịkalụ dị elu
Nnukwu okpomọkụ kemịkalụ ikuku mmiri (HTCVD) bụ usoro emelitere nke dabere na Mkpokọta Vapor Chemical (CVD).Emebere usoro a na 1995 site na Kordina et al., Mahadum Linkoping, Sweden.
E gosipụtara eserese n'usoro ihe uto na foto a:
Mgbe kristal SiC na-eto site na usoro mmiri mmiri, okpomọkụ na nkesa convection n'ime ngwọta inyeaka ka egosiri na foto a:
Enwere ike ịhụ na okpomọkụ dị nso na mgbidi crucible na ngwọta inyeaka dị elu, ebe okpomọkụ dị na kristal mkpụrụ dị ala.N'oge usoro uto, graphite crucible na-enye C isi iyi maka uto kristal.N'ihi na okpomọkụ dị na mgbidi mgbidi dị elu, solubility nke C buru ibu, na nkwụsị nke ngwa ngwa, nnukwu ego C ga-agbaze na mgbidi mgbidi iji mepụta ngwọta zuru ezu nke C. Ihe ngwọta ndị a nwere nnukwu ego. A ga-ebuga nke C gbazere na akụkụ ala nke kristal mkpụrụ site na convection n'ime ngwọta inyeaka.N'ihi na obere okpomọkụ nke mkpụrụ kristal mkpụrụ, solubility nke kwekọrọ C na-ebelata kwekọrọ ekwekọ, na mbụ C-saturated ngwọta na-aghọ a supersaturated ngwọta nke C mgbe e bufere na ala okpomọkụ ọgwụgwụ n'okpuru ọnọdụ a.Suprataturated C na ngwọta jikọtara ya na Si na enyemaka enyemaka nwere ike itolite SiC crystal epitaxial na kristal mkpụrụ.Mgbe akụkụ ahụ dị elu nke C na-ebuli elu, ihe ngwọta na-alaghachi na njedebe okpomọkụ dị elu nke mgbidi crucible na convection, wee gbazee C ọzọ iji mepụta ngwọta zuru ezu.
Usoro ahụ dum na-emegharị, na kristal SiC na-etolite.Na usoro nke mmiri mmiri na-eto eto, mgbasa na ọdịda nke C na ngwọta bụ ihe dị oke mkpa index nke ọganihu ọganihu.Iji hụ na uto kristal kwụsiri ike, ọ dị mkpa idobe nguzozi n'etiti mgbasa nke C na mgbidi crucible na mmiri ozuzo na njedebe mkpụrụ.Ọ bụrụ na mgbasa nke C dị ukwuu karịa ọdịda nke C, mgbe ahụ, C na kristal na-eji nwayọọ nwayọọ na-abawanye ụba, na nucleation nke SiC ga-eme.Ọ bụrụ na mgbasa nke C na-erughị ọdịda C, uto kristal ga-esi ike ime n'ihi enweghị solute.
N'otu oge ahụ, mbufe C site na convection na-emetụtakwa inye C n'oge uto.Iji too kristal SiC nwere ezigbo kristal zuru oke na oke zuru oke, ọ dị mkpa iji hụ na nguzozi nke ihe atọ dị n'elu, nke na-abawanye ihe isi ike nke uto mmiri mmiri SiC.Agbanyeghị, site na mmụba nwayọ na nkwalite nke echiche na teknụzụ ndị metụtara ya, uru nke uto usoro mmiri mmiri nke kristal SiC ga-eji nwayọ gosipụta.
Ka ọ dị ugbu a, enwere ike nweta mmụba nke mmiri mmiri nke kristal 2-inch nke kristal na Japan, a na-emepụtakwa uto mmiri mmiri nke kristal inch 4.Ka ọ dị ugbu a, nchọpụta ụlọ dị mkpa ahụghị ihe dị mma, ọ dịkwa mkpa ịgbaso ọrụ nyocha dị mkpa.
Nke asaa, Njirimara anụ ahụ na kemịkalụ nke kristal SiC
(1) Ihe eji arụ ọrụ: kristal SiC nwere isi ike dị oke elu yana nguzogide dị mma.Isi ike Mohs ya dị n'etiti 9.2 na 9.3, na ike Krit ya dị n'etiti 2900 na 3100Kg/mm2, nke bụ nke abụọ na kristal diamond n'etiti ihe ndị achọpụtala.N'ihi ọmarịcha ihe eji arụ ọrụ nke SiC, ntụ ntụ SiC na-ejikarị na-egbutu ma ọ bụ na-egwe nri, na-achọ ihe ruru nde tọn kwa afọ.Ihe mkpuchi na-eguzogide na ụfọdụ workpieces ga-ejikwa mkpuchi SiC, dịka ọmụmaatụ, mkpuchi mkpuchi na-eguzogide ọgwụ na ụfọdụ ụgbọ mmiri agha mejupụtara mkpuchi SiC.
(2) Thermal Njirimara: thermal conductivity nke SiC nwere ike iru 3-5 W / cm · K, nke bụ 3 ugboro nke omenala semiconductor Si na 8 ugboro nke GaAs.A na-eduzi mmepụta okpomọkụ nke ngwaọrụ nke SiC kwadebere ngwa ngwa, ya mere ihe ndị a chọrọ nke ọnọdụ ikpo ọkụ nke ngwaọrụ SiC dị ntakịrị, ọ dịkwa mma maka nkwadebe nke ngwaọrụ ndị dị elu.SiC nwere akụrụngwa thermodynamic kwụsiri ike.N'okpuru ọnọdụ nrụgide nkịtị, SiC ga-emebi ozugbo n'ime vapo nke nwere Si na C dị elu.
(3) Njirimara kemịkalụ: SiC nwere akụrụngwa kemịkalụ kwụsiri ike, ezigbo nguzogide corrosion, na anaghị emeghachi omume na acid ọ bụla amaara na okpomọkụ ụlọ.SiC etinyere na ikuku ruo ogologo oge ga-eji nwayọọ nwayọọ na-etolite obere oyi akwa nke nnukwu SiO2, na-egbochi mmeghachi omume oxidation ọzọ.Mgbe okpomọkụ na-ebili ka ihe karịrị 1700 ℃, SiO2 mkpa oyi akwa agbaze na oxidizes ngwa ngwa.SiC nwere ike nweta mmeghachi omume oxidation ngwa ngwa na oxidants ma ọ bụ ntọala a wụrụ awụ, na SiC wafers na-emebikarị na KOH na Na2O2 a wụrụ awụ iji mara nhụsianya na kristal SiC..
(4) Ngwa eletriki: SiC dị ka ihe nnọchiteanya nke semiconductors bandgap obosara, 6H-SiC na 4H-SiC bandgap obosara bụ 3.0 eV na 3.2 eV n'otu n'otu, nke bụ 3 ugboro nke Si na 2 ugboro nke GaAs.Ngwa ndị na-eduzi semi-conductor mere nke SiC nwere obere mgbawa ugbu a yana nnukwu mmebi eletrik, yabụ a na-ahụta SiC dị ka ihe dị mma maka ngwaọrụ dị elu.Ntugharị eletrọn nke SiC juru eju dịkwa okpukpu abụọ karịa nke Si, ọ nwekwara uru doro anya na nkwadebe nke ngwaọrụ ugboro ugboro.Enwere ike nweta kristal SiC ụdị P-ụdị ma ọ bụ kristal SiC N-ụdị site na doping atom adịghị ọcha na kristal.Ka ọ dị ugbu a, kristal ụdị P-ụdị SiC bụ nke Al, B, Be, O, Ga, Sc na atom ndị ọzọ na-eme ya, na ụdị N-ụdị sic kristal bụ nke N atom na-eme ya.Ọdịiche nke itinye uche doping na ụdị ga-enwe mmetụta dị ukwuu na akụrụngwa anụ ahụ na kemịkal nke SiC.N'otu oge ahụ, onye na-ebu n'efu nwere ike ịkụ ntu site na doping dị omimi dị ka V, enwere ike ịbawanye ihe mgbochi, na enwere ike nweta kristal SiC na-ekpuchi ọkara.
(5) Ngwongwo anya: N'ihi ọdịiche dị n'ụdị bandwit dị obosara, kristal SiC a na-edobeghi enweghị agba na nghọta.Kristal SiC doped na-egosi agba dị iche iche n'ihi njirimara ha dị iche iche, dịka ọmụmaatụ, 6H-SiC bụ akwụkwọ ndụ akwụkwọ ndụ mgbe doping N;4H-SiC bụ agba aja aja.15R-SiC bụ edo edo.Ejiri Al, 4H-SiC pụtara acha anụnụ anụnụ.Ọ bụ usoro kensinammuo ịmata ọdịiche dị n'ụdị kristal SiC site n'ịhụ ọdịiche nke agba.Site na nyocha na-aga n'ihu na mpaghara metụtara SiC n'ime afọ 20 gara aga, enwere nnukwu ọganiihu na teknụzụ ndị metụtara ya.
Asato,Mmalite nke ọkwa mmepe SiC
Ka ọ dị ugbu a, ụlọ ọrụ SiC na-aghọwanye nke zuru oke, site na wafers substrate, wafers epitaxial na mmepụta ngwaọrụ, nkwakọ ngwaahịa, yinye ụlọ ọrụ niile tozuru oke, ọ nwere ike ịnye ngwaahịa ndị metụtara SiC n'ahịa.
Cree bụ onye ndu na ụlọ ọrụ uto kristal SiC nwere ọkwa na-eduga na nha na ogo nke mkpụrụ osisi SiC.Cree ugbu a na-emepụta ibe mkpụrụ osisi 300,000 SiC kwa afọ, na-aza ihe karịrị 80% nke mbupu zuru ụwa ọnụ.
Na Septemba 2019, Cree kwupụtara na ọ ga-ewu ụlọ ọhụrụ na New York State, USA, nke ga-eji teknụzụ kachasị elu na-eto ike dayameta 200 mm na RF SiC substrate wafers, na-egosi na teknụzụ nkwadebe ihe nke 200 mm SiC nwere. tozuo oke.
Ka ọ dị ugbu a, ngwaahịa ndị bụ isi nke mkpụrụ osisi SiC dị n'ahịa bụ 4H-SiC na 6H-SiC na-eduzi na ụdị mkpuchi mkpuchi nke 2-6 sentimita asatọ.
N'October 2015, Cree bụ onye mbụ weputara 200 mm SiC substrate wafers maka ụdị N na LED, na-aka akara mmalite nke 8-inch SiC substrate wafers na ahịa.
Na 2016, Romm malitere ịkwado ndị otu Venturi ma bụrụ onye mbụ jiri IGBT + SiC SBD nchikota n'ime ụgbọ ala dochie IGBT + Si FRD ngwọta na omenala 200 kW inverter.Mgbe mmelite ahụ gasịrị, a na-ebelata ịdị arọ nke inverter site na 2 n'arọ ma na-ebelata nha site na 19% ka ọ na-ejigide otu ike ahụ.
Na 2017, mgbe ntinyekwu nke SiC MOS + SiC SBD, ọ bụghị naanị na ịdị arọ na-ebelata site na 6 kg, a na-ebelata nha site na 43%, na ike inverter na-abawanye site na 200 kW ruo 220 kW.
Mgbe Tesla nakweere ngwaọrụ ndị dabeere na SIC na isi ihe ntụgharị nke ngwaahịa 3 Model ya na 2018, a na-abawanye mmetụta ngosi ngwa ngwa, na-eme ka ahịa ụgbọ ala xEV bụrụ ihe na-atọ ụtọ maka ahịa SiC.Site na ngwa SiC na-aga nke ọma, uru mmepụta ahịa ya metụtara ebiliwokwa ngwa ngwa.
Nke itoolu,Mmechi:
Site na mmụba na-aga n'ihu nke teknụzụ ụlọ ọrụ metụtara SiC, mkpụrụ ya na ntụkwasị obi ga-akawanye mma, ọnụahịa nke ngwaọrụ SiC ga-ebelatakwa, asọmpi ahịa nke SiC ga-apụta ìhè karịa.N'ọdịnihu, a ga-eji ngwaọrụ SiC mee ihe n'ọtụtụ ebe dị iche iche dị ka ụgbọ ala, nkwukọrịta, grids ọkụ, na njem ụgbọ njem, na ahịa ngwaahịa ga-abawanye ụba, na nha ahịa ga-agbasawanye, ghọọ ihe nkwado dị mkpa maka mba. aku na uba.
Oge nzipu: Jan-25-2024