Ụgbọ mmiri silicon carbide graphite recrystalized

Nkọwa dị mkpirikpi:

WeiTai Energy Technology Co., Ltd bụ onye na-ebute ụzọ na-ebubata ọkachamara na wafer na ihe oriri semiconductor dị elu.Anyị raara onwe anyị nye inye ngwaahịa dị elu, ntụkwasị obi, na ihe ọhụrụ maka nrụpụta semiconductor,ụlọ ọrụ fotovoltaicna mpaghara ndị ọzọ metụtara ya.

Ahịrị ngwaahịa anyị gụnyere ngwaahịa graphite nke SiC / TaC na ngwaahịa seramiiki, gụnyere ihe dị iche iche dị ka silicon carbide, silicon nitride, na aluminum oxide na wdg.

Dị ka onye na-ebubata ntụkwasị obi, anyị ghọtara mkpa ihe oriri na-emepụta na usoro mmepụta ihe, anyị na-agbakwa mbọ na-ebuga ngwaahịa ndị na-agbaso ụkpụrụ kachasị elu iji mezuo mkpa ndị ahịa anyị.


Nkọwa ngwaahịa

Mkpado ngwaahịa

Silicon carbide bụ ụdị ceramik ọhụrụ nwere arụmọrụ dị oke ọnụ yana akụrụngwa akụrụngwa mara mma.N'ihi njirimara dị ka ike dị elu na ike siri ike, oke okpomọkụ na-eguzogide, nnukwu okpomọkụ conductivity na chemical corrosion resistance, Silicon Carbide nwere ike ọ fọrọ nke nta ka ọ ghara iguzogide ọgwụ niile.Ya mere, a na-eji SiC eme ihe na ngwuputa mmanụ, kemịkalụ, igwe na ikuku, ọbụna ike nuklia na ndị agha nwere ihe ha chọrọ na SIC.Ụfọdụ ngwa nkịtị anyị nwere ike ịnye bụ mgbanaka akara maka mgbapụta, valvụ na ihe agha nchebe wdg.

Anyị na-enwe ike chepụta na rụpụta dị ka gị kpọmkwem akụkụ na ezi mma na ezi uche nnyefe oge.

Ụgbọ mmiri silicon carbide (4)
微信图片_20230719092847

Auru:

Nguzogide oxidation dị elu

Nguzogide corrosion mara mma

Ezigbo nguzogide abrasion

Ọnụ ọgụgụ dị elu nke conductivity okpomọkụ
Mmanya onwe onye, ​​obere njupụta
Isi ike dị elu
Nhazi ahaziri ahazi.

 

Ngwa:

- Ubi na-eguzogide ọgwụ: ịhịa aka n'ahụ, efere, mmiri na-agbapụta ájá, mkpuchi cyclone, gbọmgbọm egweri, wdg ...

-Akụkụ dị elu: siC Slab, Quenching Furnace Tube, Radiant Tube, Crucible, Heat Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC ụgbọ mmiri, Kiln ụgbọ ala Structure, Setter, wdg.

-Ubi mgbochi mgbo agha

-Silicon Carbide Semiconductor: SiC wafer ụgbọ mmiri, sic chuck, sic paddle, sic cassette, sic diffusion tube, wafer ndụdụ, mmiri ara ehi, ụzọ ụzọ, wdg.

-Silicon Carbide Seal Field: ụdị mgbanaka akara niile, ibu, ahịhịa, wdg.

-Ubi fotovoltaic: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller, wdg.

- Ubi batrị lithium

Nka nka:

图片2

Mpempe akwụkwọ data ihe

材料Ihe onwunwe

R-SiC

使用温度Ọnọdụ okpomọkụ na-arụ ọrụ (°C)

1600°C氧化气氛gburugburu oxidizing)

1700°C还原气氛Mbelata gburugburu ebe obibi)

SiC含量Ọdịnaya SiC (%)

> 99

自由Si含量Ọdịnaya Si efu (%)

<0.1

体积密度Njupụta nnukwu (g/cm3)

2.60-2.70

气孔率Obere porosity pụtara (%)

<16

抗压强度Ike ịkụpịa (MPa)

> 600

常温抗弯强度Ike agbagọ oyi (MPa)

80-90 (20°C)

高温抗弯强度Ike na-ehulata ọkụ (MPa)

90-100 (1400°C)

热膨胀系数

Ọnụọgụ mgbasawanye okpomọkụ @1500°C (10-6/°C)

4.70

导热系数Nrụpụta okpomọkụ @1200°C (W/mK)

23

杨氏模量Elastic modulus (GPa)

240

抗热震性Mgbochi ujo okpomọkụ

很好Dị oke mma

Ụgbọ mmiri silicon carbide (2)

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