Nkọwa
CVD-SiC mkpuchinwere àgwà nke edo Ọdịdị, kọmpat ihe, elu okpomọkụ eguzogide, ọxịdashọn-eguzogide, elu ịdị ọcha, acid & alkali eguzogide na organic reagent, na anụ ahụ na chemical Njirimara.
N'iji ya tụnyere ihe ndị dị elu nke graphite, graphite na-amalite oxidize na 400C, nke ga-eme ka nkwụsị nke ntụ ntụ n'ihi oxidation, na-ebute mmetọ gburugburu ebe obibi na ngwaọrụ ndị dị n'akụkụ na oghere oghere, na-amụba adịghị ọcha nke gburugburu ebe obibi dị ọcha.
Agbanyeghị,mkpuchi SiCnwere ike idowe nkwụsi ike anụ ahụ na kemịkalụ na ogo 1600, A na-ejikarị ya na ụlọ ọrụ ọgbara ọhụrụ, ọkachasị na ụlọ ọrụ semiconductor.
Isi atụmatụ
1 .High ịdị ọcha SiC mkpuchi graphite
2. Nguzogide okpomọkụ kachasị elu & thermal uniformity
3. Ọ dị mmaSiC crystal kpuchiemaka elu dị larịị
4. Nnukwu ogologo oge megide ihicha kemịkalụ
Nkọwa bụ isi nke mkpuchi CVD-SIC:
SiC-CVD | ||
Njupụta | (g/cc) | 3.21 |
Ike mgbanwe | (Mpa) | 470 |
Mgbasa ọkụ ọkụ | (10-6/K) | 4 |
Thermal conductivity | (W/mK) | 300 |
Mbukota na mbupu
Ikike inye:
10000 Iberibe/Iberibe kwa ọnwa
Nkwakọ ngwaahịa na nnyefe:
Mbukota: Standard & siri ike mbukota
Akpa Poly + Igbe + Katọn + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Etiti oge:
Ọnụọgụ(Iberibe) | 1 - 1000 | >1000 |
Est. Oge (ụbọchị) | 30 | A ga-enwe mkparịta ụka |