Nkọwa ngwaahịa
4h-n 4inch 6inch dia100mm sic mkpụrụ wafer 1mm ọkpụrụkpụ maka ingot uto
Ụdị ahaziri ahazi / 2inch / 3inch / 4inch / 6inch 6H-N / 4H-SEMI / 4H-N SIC ingots / ịdị ọcha dị elu 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS / ahaziri dị ka-cut sic wafersMmepụta 4inch ọkwa 4H-N 1.5mm SIC Wafers maka mkpụrụ kristal
Banyere Silicon Carbide (SiC) Crystal
Silicon carbide (SiC), makwaara dị ka carborundum, bụ semiconductor nwere silicon na carbon nwere usoro kemịkalụ SiC. A na-eji SiC na ngwaọrụ eletrọnịkị semiconductor nke na-arụ ọrụ na oke okpomọkụ ma ọ bụ nnukwu voltaji, ma ọ bụ abụọ.SiC bụkwa otu n'ime ihe ndị dị mkpa LED, ọ bụ mkpụrụ na-ewu ewu maka ngwaọrụ GaN na-eto eto, ọ na-ejekwa ozi dị ka onye na-ekesa ọkụ na elu- ike LEDs.
Nkọwa
| Ngwongwo | 4H-SiC, otu kristal | 6H-SiC, otu kristal |
| Parameters Lattice | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Usoro nchịkọta | ABCB | ABCACB |
| Mohs ike | ≈9.2 | ≈9.2 |
| Njupụta | 3.21g/cm3 | 3.21g/cm3 |
| Therm. Ọnụ ego mgbasawanye | 4-5×10-6/K | 4-5×10-6/K |
| Ntụgharị ntụgharị @750nm | enweghị = 2.61 | enweghị = 2.60 |
| Dielectric Constant | c~9,66 | c~9,66 |
| Nrụpụta ọkụ (ụdị N, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
|
| Nrụpụta ọkụ (ọkara mkpuchi) | a ~ 4.9 W/cm·K@298K | a ~ 4.6 W/cm·K@298K |
| Band-oghere | 3.23 eV | 3.02 eV |
| Ubi eletrik na-agbaji | 3-5 × 106V / cm | 3-5 × 106V / cm |
| Saturation Drift Velocity | 2.0 × 105m / s | 2.0 × 105m / s |
