Onye na-ahụ maka eserese nwere Silicon Carbide mkpuchi Barrel tray

Onye na-ahụ maka eserese eserese nwere silicon Carbide mkpuchi Barrel tray egosipụtara

Nkọwa dị mkpirikpi:

Semicera na-enye ọtụtụ ihe susceptors na ihe graphite emebere maka ndị na-emegharị epitaxy dị iche iche.

Site na mmekorita atụmatụ ya na OEM ndị na-eduzi ụlọ ọrụ, ọkachamara ihe dị ukwuu, yana ike nrụpụta dị elu, Semicera na-ebupụta atụmatụ ahaziri iji mezuo ihe achọrọ ngwa gị. Nkwenye anyị maka ịdị mma na-eme ka ị nweta azịza kachasị mma maka mkpa reactor epitaxy gị.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Nkọwa

Ụlọ ọrụ anyị na-enye ọrụ usoro mkpuchi SiC site na usoro CVD n'elu graphite, ceramics na ihe ndị ọzọ, nke mere na gas pụrụ iche nwere carbon na silicon na-emeghachi omume na okpomọkụ dị elu iji nweta mkpụrụ ndụ SiC dị ọcha, ụmụ irighiri ihe ndị a na-edebe n'elu ihe ndị a na-ekpuchi, na-akpụ oyi akwa mkpuchi SIC.

gbasara (1)

gbasara (2)

Isi atụmatụ

1 .High ịdị ọcha SiC mkpuchi graphite

2. Nguzogide okpomọkụ kachasị elu & thermal uniformity

3. Ọmarịcha SiC kristal kpuchie maka elu dị larịị

4. Nnukwu ogologo oge megide ihicha kemịkalụ

Nkọwa isi nke mkpuchi CVD-SIC

Njirimara SiC-CVD
Ọdịdị kristal	FCC β oge
Njupụta	g/cm ³	3.21
Isi ike	Vickers isi ike	2500
Nha ọka	μm	2 ~ 10
Ịdị ọcha kemịkalụ	%	99,99995
Ike ikpo ọkụ	J·kg-1 · K-1	640
Sublimation okpomọkụ	℃	2700
Ike Felexural	MPa (RT 4-isi)	415
Modul nke Young	GPA (4pt gbagọọ, 1300 ℃)	430
Mgbasawanye okpomọkụ (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300