Onye na-ahụ maka eserese eserese nwere mkpuchi silicon Carbide, tray Barrel

Nkọwa dị mkpirikpi:

Semicera na-enye ọtụtụ ihe susceptors na ihe graphite emebere maka ndị na-emegharị epitaxy dị iche iche.

Site na mmekorita atụmatụ ya na OEM ndị na-eduzi ụlọ ọrụ, ọkachamara ihe dị ukwuu, yana ike nrụpụta dị elu, Semicera na-ewepụta atụmatụ ahaziri iji mezuo ihe achọrọ ngwa gị.Nkwenye anyị maka ịdị mma na-eme ka ị nweta azịza kachasị mma maka mkpa reactor epitaxy gị.

 

Nkọwa ngwaahịa

Mkpado ngwaahịa

Nkọwa

Ụlọ ọrụ anyị na-enye ọrụ usoro mkpuchi SiC site na usoro CVD n'elu graphite, ceramics na ihe ndị ọzọ, nke mere na gas pụrụ iche nwere carbon na silicon na-emeghachi omume na okpomọkụ dị elu iji nweta mkpụrụ ndụ SiC dị ọcha, ụmụ irighiri ihe ndị a na-edebe n'elu ihe ndị a na-ekpuchi, na-akpụ oyi akwa mkpuchi SIC.

gbasara (1)

gbasara (2)

Isi atụmatụ

1 .High ịdị ọcha SiC mkpuchi graphite

2. Nguzogide okpomọkụ kachasị elu & thermal uniformity

3. Ọmarịcha SiC kristal kpuchie maka elu dị larịị

4. Nnukwu ogologo oge megide ihicha kemịkalụ

Nkọwa isi nke mkpuchi CVD-SIC

Njirimara SiC-CVD
Ọdịdị kristal FCC β oge
Njupụta g/cm ³ 3.21
Isi ike Vickers isi ike 2500
Nha ọka μm 2 ~ 10
Ịdị ọcha kemịkalụ % 99,99995
Ike ikpo ọkụ J·kg-1 · K-1 640
Sublimation okpomọkụ 2700
Ike Felexural MPa (RT 4-isi) 415
Modul nke Young GPA (4pt gbagọọ, 1300 ℃) 430
Mgbasawanye okpomọkụ (CTE) 10-6K-1 4.5
Thermal conductivity (W/mK) 300
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Ụlọ ọrụ Semicera
Ụlọ ọrụ Semicera 2
Igwe eji eme ihe
Nhazi CNN, nhicha kemịkalụ, mkpuchi CVD
Ọrụ anyị

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