Nkọwa
NkeSilicon Carbide (SiC) Wafer Susceptorsmaka MOCVD sitere na semicera emebere maka usoro epitaxial dị elu, na-enye arụmọrụ dị elu maka ha abụọDị ka EpitaxynaSiC epitaxyngwa. Uzo ohuru ohuru nke Semicera na-eme ka ihe nleba anya ndi a na-adigide ma di oma, na-enye nkwụsi ike na nkenke maka ọrụ nrụpụta dị oke mkpa.
Injinia iji kwado mkpa mgbagwoju anya nkeMOCVD SusceptorSistemu, ngwaahịa ndị a na-agbanwe agbanwe, dakọtara na ndị na-ebu dị ka PSS Etching Carrier, ICP Etching Carrier, na RTP Carrier. Mgbanwe ha na-eme ka ha dị mma maka ụlọ ọrụ teknụzụ dị elu, gụnyere ndị na-arụ ọrụEpitaxial LEDSusceptor na Monocrystalline Silicon.
Na otutu nhazi, gụnyere Barrel Susceptor na Pancake Susceptor, ndị na-ahụ maka wafer ndị a dịkwa mkpa na mpaghara fotovoltaic, na-akwado mmepụta nke Photovoltaic Parts. Maka ndị na-emepụta semiconductor, ikike ijikwa GaN na usoro SiC Epitaxy na-eme ka ndị na-ahụ maka ihe ndị a bara uru nke ukwuu maka ịhụ na mmepụta dị elu gafee ọtụtụ ngwa.
Isi atụmatụ
1 .High ịdị ọcha SiC mkpuchi graphite
2. Nguzogide okpomọkụ kachasị elu & thermal uniformity
3. Ọ dị mmaSiC crystal kpuchiemaka elu dị larịị
4. Nnukwu ogologo oge megide ihicha kemịkalụ
Nkọwa bụ isi nke mkpuchi CVD-SIC:
| SiC-CVD | ||
| Njupụta | (g/cc) | 3.21 |
| Ike mgbanwe | (Mpa) | 470 |
| Mgbasa ọkụ ọkụ | (10-6/K) | 4 |
| Thermal conductivity | (W/mK) | 300 |
Mbukota na mbupu
Ikike inye:
10000 Iberibe/Iberibe kwa ọnwa
Nkwakọ ngwaahịa na nnyefe:
Mbukota: Standard & siri ike mbukota
Akpa Poly + Igbe + Katọn + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Etiti oge:
| Ọnụọgụ(Iberibe) | 1-1000 | >1000 |
| Est. Oge (ụbọchị) | 30 | A ga-enwe mkparịta ụka |
