Silicon nitride jikọtara ogidi silicon carbide

Nkọwa dị mkpirikpi:

Si3N4 bonded SiC dị ka ihe ọhụrụ ụdị refractory ihe, na-eji ọtụtụ ebe. The itinye okpomọkụ bụ 1400 C.It nwere mma thermal kwụsie ike, thermal ujo, nke dị mma karịa larịị refractory material.It nwekwara mgbochi mgbochi.-oxidation, elu corrosion na-eguzogide, eyi-eguzogide, elu na-ehulata ike.Ọ nwere ike iguzogide corrosion na scouring, ghara ịbụ ihe mmetọ na ngwa ngwa okpomọkụ conduction na gbazee metal dị ka AL, Pb, Zn, Cu ect.


Nkọwa ngwaahịa

Mkpado ngwaahịa

描述

Silicon nitride jikọtara silicon carbide

Si3N4 bonded SiC seramiiki refractory ihe, na-agwakọta ya na elu dị ọcha SIC ezi ntụ ntụ na Silicon ntụ ntụ, mgbe slipping N'ezie, mmeghachi omume sintered n'okpuru 1400 ~ 1500 ° C. N'oge ọmụmụ ihe, na-ejuputa Nitrogen dị ọcha n'ime ọkụ, mgbe ahụ, silicon ga-emeghachi omume na Nitrogen wee mepụta Si3N4, Ya mere, Si3N4 bonded SiC material bụ silicon nitride (23%) na silicon carbide (75%) dị ka isi akụrụngwa. , ngwakọta na organic ihe, na kpụrụ site ngwakọta, extrusion ma ọ bụ wụsara, wee mee mgbe ihicha na nitrogenization.

 

特点

Atụmatụ na uru:

1.High okpomọkụ ndidi
2.High thermal conductivity na ujo iguzogide
3.High n'ibu ike na abrasion mgbochi
4.Excellent ike arụmọrụ na corrosion iguzogide

Anyị na-enye ihe nrụpụta seramiiki NSiC dị elu na nke ziri ezi nke na-ahazi ya

1.Mfe nkedo
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing

Mpempe akwụkwọ data ihe

> Ngwakọta kemịkalụ Sic 75%
Si3N4 ≥23%
Free Si 0%
Njupụta nnukwu (g/cm3) 2.702.80
Obere porosity pụtara (%) 1215
Ehulata ike na 20 ℃ (MPa) 180190
Ehulata ike na 1200 ℃ (MPa) 207
Ehulata ike na 1350 ℃ (MPa) 210
Ike mkpakọ na 20 ℃ (MPa) 580
Thermal conductivity na 1200 ℃ (w / mk) 19.6
Ọnụọgụ mgbasawanye thermal at1200 ℃(x 10-6/C) 4.70
Mgbochi ujo okpomọkụ Magburu onwe
Oke. okpomọkụ (℃) 1600

Ụlọ ọrụ Semicera Ụlọ ọrụ Semicera 2 Igwe eji eme ihe Nhazi CNN, nhicha kemịkalụ, mkpuchi CVD Ọrụ anyị


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