Silicon nitride jikọtara ogidi silicon carbide

Nkọwa dị mkpirikpi:

Si3N4 bonded SiC dị ka ihe ọhụrụ ụdị refractory ihe, na-eji ọtụtụ ebe. The itinye okpomọkụ bụ 1400 C.It nwere mma thermal kwụsie ike, thermal ujo, nke dị mma karịa larịị refractory material.It nwekwara mgbochi mgbochi.-oxidation, elu corrosion na-eguzogide, eyi-eguzogide, elu na-ehulata ike.Ọ nwere ike iguzogide corrosion na scouring, ghara ịbụ ihe mmetọ na ngwa ngwa okpomọkụ conduction na gbazee metal dị ka AL, Pb, Zn, Cu ect.


Nkọwa ngwaahịa

Mkpado ngwaahịa

描述

Silicon nitride jikọtara silicon carbide

Si3N4 bonded SiC seramiiki refractory ihe, na-agwakọta ya na elu dị ọcha SIC ezi ntụ ntụ na Silicon ntụ ntụ, mgbe slipping N'ezie, mmeghachi omume sintered n'okpuru 1400 ~ 1500 ° C.N'oge ọmụmụ ihe, na-ejuputa Nitrogen dị ọcha n'ime ọkụ, mgbe ahụ, silicon ga-emeghachi omume na Nitrogen wee mepụta Si3N4, Ya mere, Si3N4 bonded SiC material bụ silicon nitride (23%) na silicon carbide (75%) dị ka isi akụrụngwa. , ngwakọta na organic ihe, na ekara site ngwakọta, extrusion ma ọ bụ wụsara, wee mee mgbe ihicha na nitrogenization.

 

特点

Atụmatụ na uru:

1.High okpomọkụ ndidi
2.High thermal conductivity na ujo iguzogide
3.High n'ibu ike na abrasion mgbochi
4.Excellent ike arụmọrụ na corrosion iguzogide

Anyị na-enye akụkụ seramiiki NSiC dị elu na nke ziri ezi nke na-arụ ọrụ site na

1.Mfe nkedo
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing

Mpempe akwụkwọ data ihe

> Ngwakọta kemịkalụ Sic 75%
Si3N4 ≥23%
Free Si 0%
Njupụta nnukwu (g/cm3) 2.702.80
Obere porosity pụtara (%) 1215
Ehulata ike na 20 ℃ (MPa) 180190
Ehulata ike na 1200 ℃ (MPa) 207
Ehulata ike na 1350 ℃ (MPa) 210
Ike mkpakọ na 20 ℃ (MPa) 580
Thermal conductivity na 1200 ℃ (w / mk) 19.6
Ọnụọgụ mgbasawanye okpomọkụ na 1200 ℃ (x 10-6/C) 4.70
Mgbochi ujo okpomọkụ Magburu onwe
Oke.okpomọkụ (℃) 1600
公司介绍

WeiTai Energy Technology Co., Ltd bụ onye na-ebute ụzọ nke seramiki semiconductor dị elu yana naanị onye nrụpụta na China nke nwere ike n'otu oge na-enye seramiiki silicon carbide dị ọcha (karịsịa Recrystallized SiC) na mkpuchi CVD SiC.Na mgbakwunye, ụlọ ọrụ anyị na-agba mbọ maka ubi seramiiki dị ka alumina, aluminum nitride, zirconia, na silicon nitride, wdg.

Isi ngwaahịa anyị gụnyere: silicon carbide etching disc, silicon carbide boat tow, silicon carbide wafer ụgbọ mmiri (Photovoltaic&Semiconductor), silicon carbide furnace tube, silicon carbide cantilever paddle, silicon carbide chucks, silicon carbide beam, yana mkpuchi CVD SiC na TaC mkpuchi.Ngwaahịa ndị a na-ejikarị na semiconductor na ụlọ ọrụ fotovoltaic, dị ka akụrụngwa maka uto kristal, epitaxy, etching, nkwakọ, mkpuchi na ọkụ mgbasa, wdg.

Ụlọ ọrụ anyị nwere ngwá ọrụ mmepụta ihe zuru oke dị ka ịkpụzi, sintering, nhazi, mkpuchi mkpuchi, wdg, nke nwere ike mezue njikọ niile dị mkpa nke mmepụta ngwaahịa ma nwee njikwa dị elu nke àgwà ngwaahịa;Enwere ike ịhọrọ atụmatụ mmepụta kachasị mma dị ka mkpa nke ngwaahịa ahụ si dị, na-eme ka ọnụ ahịa dị ala ma na-enye ndị ahịa ngwaahịa ndị ọzọ asọmpi;Anyị nwere ike na-agbanwe agbanwe na ịrụ ọrụ nke ọma ịhazi mmepụta nke dabere na ihe nnyefe chọrọ yana njikọ na usoro njikwa usoro ntanetị, na-enye ndị ahịa oge nnyefe ngwa ngwa na karịa.


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