SOI Wafers

Nkọwa dị mkpirikpi:

Ngwunye SOI bụ ihe dị ka Sanwichi nwere akwa atọ;Gụnyere elu oyi akwa (okpukpu ngwaọrụ), n'etiti oyi akwa oxygen e liri (maka mkpuchi SiO2 oyi akwa) na mkpụrụ ala (silicon buru ibu).A na-emepụta wafers SOI site na iji usoro SIMOX na teknụzụ wafer bonding, nke na-enye ohere maka ngwaọrụ dị gịrịgịrị na nke ziri ezi karị, ọkpụrụkpụ otu na njupụta ntụpọ dị ala.

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Nkọwa ngwaahịa

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SOI Wafers (1)

Mpaghara ngwa

1. Sekit ejikọta ọnụ dị elu

2. Ngwa igwe igwe

3. Elu okpomọkụ integrated circuit

4. Ngwaọrụ ike

5. Obere ike agbakwunyere sekit

6. MEMS

7. Obere voltaji jikọtara sekit

Ihe		Arụmụka
N'ozuzu	Dayameta Wafer 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Ụta/Warp 翘曲度	<10um
	Ụmụ irighiri ihe 颗粒度	0.3m <30e
	Flat/Notch 定位边/定位槽	Flat ma ọ bụ notch
	Mwepu ihu 边缘去除(mm)	/
Igwe oyi akwa 器件层	Ụdị ngwaọrụ-oyi akwa 器件层掺杂类型	N-Ụdị/P-Ụdị B/P/ Sb/ As
	Nhazi ngwaọrụ-oyi akwa 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Ọkpụrụkpụ ngwaọrụ-oyi 器件层厚度(um)	0.1 ~ 300m
	Resistivity nke oyi akwa ngwaọrụ 器件层电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Ngwa-oyi akwa 器件层颗粒度(	<30ea@0.3
	Igwe oyi akwa TTV 器件层TTV(	<10um
	Ngwucha oyi akwa ngwaọrụ 器件层表面处理	Achachapụrụ
Igbe	Ọkpụrụkpụ Thermal Oxide e liri 埋氧层厚度(um)	50nm(500Å)~15um
Ejikwa oyi akwa Amụma	Jikwaa Ụdị Wafer/Nnyefe 衬底层类型	N-Ụdị/P-Ụdị B/P/ Sb/ As
	Jikwaa usoro Wafer 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Jikwaa Resistivity Wafer 衬底电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Jikwaa Ọkpụrụkpụ Wafer 衬底厚度(um)	> 100um
	Jikwaa ngwucha wafer 衬底表面处理	Achachapụrụ
Enwere ike ịhazi wafers SOI nke nkọwa ebumnuche dịka ihe ndị ahịa chọrọ.