A na-ekewa ihe ndị GaAs n'ime ihe na-eduzi na nke ọkara mkpuchi, nke a na-ejikarị na laser (LD), semiconductor light-emitting diode (LED), laser infrared nso, quantum nke ọma laser na-arụ ọrụ nke ọma na ogwe ọkụ dị elu. HEMT na HBT ibe maka radar, microwave, millimeter wave ma ọ bụ kọmpụta dị oke ọsọ na nkwukọrịta ngwa anya; Ngwaọrụ ugboro redio maka nkwukọrịta ikuku, 4G, 5G, nkwukọrịta satịlaịtị, WLAN.
Na nso nso a, gallium arsenide substrates enwewokwa nnukwu ọganihu na mini-LED, Micro-LED, na red LED, ma na-eji ya na ngwaọrụ AR/VR wearable.
Dayameta | 50mm | 75mm | 100mm | 150mm |
Uzo uto | LEC液封直拉法 |
Ọkpụrụkpụ Wafer | 350mm ~ 625 mm |
Nhazi | <100> / <111> / <110> ma ọ bụ ndị ọzọ |
Ụdị omume | P - ụdị / N - ụdị / Semi-insulating |
Ụdị/Dopant | Zn / Si / emechiri |
Ntinye uche nke ebu | 1E17 ~ 5E19 cm-3 |
Resistivity na RT | ≥1E7 maka SI |
Mbugharị | ≥4000 |
EPD (Etch Pit Density) | 100-1E5 |
TTV | ≤ 10 um |
Ụta / Warp | ≤20 um |
Emecha elu elu | DSP/SSP |
Laser Mark |
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Ọkwa | Epi polished ọkwa / ọkwa igwe |