Ngwa ndị Silicon Carbide | Wafers SiC

Ngwa ndị Silicon Carbide|Onyonyo egosipụtara SiC Wafers

Nkọwa dị mkpirikpi:

WeiTai Energy Technology Co., Ltd bụ onye na-ebute ụzọ na-ebubata ọkachamara na wafer na ihe oriri semiconductor dị elu.Anyị raara onwe anyị nye ịnye ngwaahịa dị elu, nke a pụrụ ịdabere na ya, na ihe ọhụrụ maka mmepụta semiconductor, ụlọ ọrụ fotovoltaic na mpaghara ndị ọzọ metụtara ya.

Ahịrị ngwaahịa anyị gụnyere ngwaahịa graphite nke SiC / TaC na ngwaahịa seramiiki, gụnyere ihe dị iche iche dị ka silicon carbide, silicon nitride, na aluminum oxide na wdg.

Ugbu a, anyị bụ naanị onye nrụpụta na-enye mkpuchi 99.9999% SiC dị ọcha na 99.9% silicon carbide recrystallized.The max SiC mkpuchi ogologo anyị nwere ike ime 2640mm.

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Nkọwa ngwaahịa

Mkpado ngwaahịa

Silicon carbide (SiC) otu ihe kristal nwere nnukwu oghere obosara (~ Si 3 ugboro), ịdị elu nke thermal conductivity (~ Si 3.3 ugboro ma ọ bụ GaAs ugboro 10), ọnụego mgbanwe saturation elektrọn dị elu (~ Si 2.5 ugboro), ọkụ eletrik dị elu. ubi (~ Si ugboro 10 ma ọ bụ GaAs 5 ugboro) na njirimara ndị ọzọ pụtara ìhè.

Ngwa SiC nwere uru a na-apụghị dochie anya n'ọhịa nke okpomọkụ dị elu, nrụgide dị elu, ugboro ugboro, ngwa eletrik dị elu na ngwa gburugburu ebe obibi dị egwu dị ka ikuku ikuku, agha, ike nuklia, wdg, na-eme ka ntụpọ nke ngwaọrụ semiconductor omenala dị irè. ngwa, ma na-eji nwayọọ nwayọọ na-aghọ ndị isi nke semiconductors ike.

4H-SiC Silicon carbide nkọwa nkọwa

Ihe 项目	Nkọwapụta
Ụdị poly 晶型	4H - SiC	6H- SiC
Dayameta 晶圆直径	2 anụ ọhịa \|3 anụ ọhịa \|4 anụ ọhịa \|6 anụ ọhịa	2 anụ ọhịa \|3 anụ ọhịa \|4 anụ ọhịa \|6 anụ ọhịa
Ọkpụrụkpụ 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Omume omume 导电类型	N - ụdị / ọkara mkpuchi N型导电片/ 半绝缘片	N - ụdị / ọkara mkpuchi N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 (Nitrogen) V (Vandium)	N2 (Nitrogen) V (Vandium)
Nhazi 晶向	Na axis <0001> Gbanyụọ axis <0001> gbanyụọ 4°	Na axis <0001> Gbanyụọ axis <0001> gbanyụọ 4°
Nguzogide 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Njupụta Micropipe (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤15 μm	≤15 μm
Ụta / Warp 翘曲度	≤25 μm	≤25 μm
Elu 表面处理	DSP/SSP	DSP/SSP
Ọkwa 产品等级	Ọkwa mmepụta / nyocha	Ọkwa mmepụta / nyocha
Usoro nchịkọta kristal 堆积方式	ABCB	ABCABC
Oke Lattice 晶格参数	a = 3.076A, c=10.053A	a = 3.073A, c=15.117A
Ọmụmaatụ/eV(Bandi-oghere) 禁带宽度	3.27 nke eV	3.02 eV
ε(Dielectric Constant) 介电常数	9.6	9.66
Ntụgharị uche 折射率	n0 = 2.719 ne = 2.777	n0 =2.707, ne =2.755

Nkọwapụta mkpụrụ 6H-SiC Silicon Carbide

Ihe 项目	Nkọwapụta
Ụdị poly 晶型	6H-SiC
Dayameta 晶圆直径	4 anụ ọhịa \|6 anụ ọhịa
Ọkpụrụkpụ 厚度	350μm ~ 450μm
Omume omume 导电类型	N - ụdị / ọkara mkpuchi N型导电片/ 半绝缘片
Dopant 掺杂剂	Nitrogen (N2) V (Vadium)
Nhazi 晶向	<0001> gbanyụọ 4°± 0.5°
Nguzogide 电阻率	0.02 ~ 0.1 ohm-cm (6H-N Ụdị)
Njupụta Micropipe (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤15 μm
Ụta / Warp 翘曲度	≤25 μm
Elu 表面处理	Si Ihu: CMP, Epi-Njikere Ihu C: Ngwa anya Polish
Ọkwa 产品等级	Nchọpụta ọkwa