GaAs Wafers|GaAs Epi Wafers|Galllium Arsenide mkpụrụ

Nkọwa dị mkpirikpi:

WeiTai Energy Technology Co., Ltd bụ onye na-ebute ụzọ na-ebubata ọkachamara na wafer na ihe oriri semiconductor dị elu.Anyị raara onwe anyị nye ịnye ngwaahịa dị elu, nke a pụrụ ịdabere na ya, na ihe ọhụrụ maka mmepụta semiconductor, ụlọ ọrụ fotovoltaic na mpaghara ndị ọzọ metụtara ya.

Ahịrị ngwaahịa anyị gụnyere ngwaahịa graphite nke SiC / TaC na ngwaahịa seramiiki, gụnyere ihe dị iche iche dị ka silicon carbide, silicon nitride, na aluminum oxide na wdg.

Ugbu a, anyị bụ naanị onye nrụpụta na-enye mkpuchi 99.9999% SiC dị ọcha na 99.9% silicon carbide recrystallized.The max SiC mkpuchi ogologo anyị nwere ike ime 2640mm.


Nkọwa ngwaahịa

Mkpado ngwaahịa

Ngwa gaAs (1)

A na-ekewa ihe ndị GaAs n'ime conductive na nke ọkara mkpuchi, nke a na-ejikarị na laser (LD), semiconductor light-emitting diode (LED), laser infrared dị nso, quantum nke ọma laser ike dị elu na ogwe ọkụ dị elu.HEMT na HBT ibe maka radar, microwave, millimeter wave ma ọ bụ kọmpụta dị oke ọsọ na nkwukọrịta ngwa anya;Ngwaọrụ ugboro redio maka nkwukọrịta ikuku, 4G, 5G, nkwukọrịta satịlaịtị, WLAN.

Na nso nso a, gallium arsenide substrates enwewokwa nnukwu ọganihu na mini-LED, Micro-LED, na red LED, ma na-eji ya na ngwaọrụ AR/VR wearable.

Dayameta
晶片直径

50mm |75mm |100mm |150mm

Uzo uto
生长方式

LEC液封直拉法
VGF垂直梯度凝固法

Ọkpụrụkpụ Wafer
厚度

350mm ~ 625 mm

Nhazi
晶向

<100> / <111> / <110> ma ọ bụ ndị ọzọ

Ụdị omume
导电类型

P - ụdị / N - ụdị / Semi-insulating

Ụdị/Dopant
掺杂剂

Zn / Si / emechiri

Ntinye uche nke ebu
载流子浓度

1E17 ~ 5E19 cm-3

Resistivity na RT
室温电阻率(ohm•cm)

≥1E7 maka SI

Mbugharị
迁移率(cm2/V• nkeji)

≥4000

EPD (Etch Pit Density)
腐蚀坑密度

100-1E5

TTV
总厚度变化

≤ 10 um

Ụta / Warp
翘曲度

≤20 um

Emecha elu elu
Ọkụ

DSP/SSP

Laser Mark
激光码

 

Ọkwa
等级

Epi polished ọkwa / ọkwa igwe

Ụlọ ọrụ Semicera Ụlọ ọrụ Semicera 2 Igwe eji eme ihe Nhazi CNN, nhicha kemịkalụ, mkpuchi CVD Ọrụ anyị


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