Ọgbọ nke atọ semiconductor ihe tumadi gụnyere SiC, GaN, diamond, wdg, n'ihi na ya band ọdịiche obosara (Eg) karịrị ma ọ bụ hà 2.3 electron volts (eV), makwaara dị ka wide band gap semiconductor ihe. E jiri ya tụnyere nke mbụ na nke abụọ ọgbọ semiconductor ihe, ọgbọ nke atọ semiconductor ihe nwere uru nke elu thermal conductivity, elu mmebi eletriki, elu juputara eletrọn Mbugharị ọnụego na elu bonding ike, nke nwere ike izute ọhụrụ chọrọ nke ọgbara ọhụrụ technology electronic maka elu. okpomọkụ, ike dị elu, nrụgide dị elu, ugboro ugboro na nguzogide radieshon na ọnọdụ ndị ọzọ siri ike. Ọ nwere atụmanya ngwa dị mkpa na mpaghara nchekwa mba, ụgbọ elu, ikuku ikuku, nyocha mmanụ, nchekwa anya, wdg, ma nwee ike belata ọnwụ ike karịa 50% n'ọtụtụ ụlọ ọrụ dị mkpa dị ka nkwukọrịta brọdband, ike anyanwụ, nrụpụta ụgbọ ala, semiconductor ọkụ, na smart grid, ma nwee ike ibelata olu akụrụngwa karịa 75%, nke bụ ihe dị mkpa maka mmepe sayensị na teknụzụ mmadụ.
| Ihe 项目 | GaN-FS-CU-C50 | GaN-FS-CN-C50 | GaN-FS-C-SI-C50 |
| Dayameta | 50.8 ± 1 mm | ||
| Ọkpụrụkpụ厚度 | 350 ± 25 μm | ||
| Nhazi | Ụgbọ elu C (0001) kwụsịrị n'akuku M-axis 0.35 ± 0.15° | ||
| Isi Flat | (1-100) 0 ± 0.5°, 16 ± 1 mm | ||
| Ụlọ elu nke abụọ | (11-20) 0 ± 3°, 8 ± 1 mm | ||
| Omume omume | Ụdị N | Ụdị N | Ọkara mkpuchi |
| Nguzogide (300K) | <0.1 Ω·cm | <0.05 Ω·cm | > 106 Ω·cm |
| TTV | ≤15 μm | ||
| ỤTA | ≤20 μm | ||
| Ga Ihu dị n'elu ala adịghị mma | <0.2 nm (a na-egbu maramara); | ||
| ma ọ bụ <0.3 nm (ọgwụgwọ na elu maka epitaxy) | |||
| N Ihu Elu Ihu | 0.5 ~ 1.5 μm | ||
| nhọrọ: 1 ~ 3 nm (ezigbo ala); <0.2 nm (a na-egbu maramara) | |||
| Njupụta nke Dislocation | Site na 1 x 105 ruo 3 x 106 cm-2 (nke CL gbakọrọ)* | ||
| Njupụta nnukwu nnukwu ntụpọ | <2 cm-2 | ||
| Mpaghara bara uru | > 90% (mwepu ntụpọ ihu na nnukwu) | ||
| Enwere ike ịhazi ya dị ka ihe ndị ahịa chọrọ si dị, ụdị dị iche iche nke silicon, sapphire, akwụkwọ mpempe akwụkwọ nke SiC dabeere na GaN. | |||
